Modified potential well formed by Si/SiO2/TiN/TiO 2/SiO2/TaN for flash memory application

IEEE Transactions on Electron Devices

Volumn 57, Issue 11, 2010, Pages 2794-2800

  Zhang, Gang ^a,b   Ra, Chang Ho ^a,b   Li, Hua Min ^a   Shen, Tian Zi ^a   Cheong, Byung Ki ^b   Yoo, Won Jong ^a  

^a Sungkyunkwan University   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

Author keywords

Flash memory; modified engineered potential well (MW); TiO2 trapping layer

Indexed keywords

CHARGE LOSS; DATA RETENTION; DEEP ELECTRON TRAPS; LOW VOLTAGE OPERATION; MEMORY APPLICATIONS; MODIFIED ENGINEERED-POTENTIAL- WELL (MW); NAND FLASH MEMORY; POTENTIAL WELLS; SHALLOW TRAPS; THERMAL TREATMENT; TIO; TIO2 TRAPPING LAYER; TRAPPING LAYERS; TUNNEL BARRIER;

CHARGE TRAPPING; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON TRAPS; SILICON COMPOUNDS; TANTALUM COMPOUNDS;

FLASH MEMORY;

EID: 78049318900     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2066200     Document Type: Article

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