Fabrication of a SiSi O2 multiple-quantum-well light emitting diode using remote plasma enhanced chemical vapor deposition

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 6, 2005, Pages 3214-3218

  Rolver R ^a   Bruninghoff S ^a   Forst M ^a   Spangenberg, B ^a   Kurz, H ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTROLUMINESCENCE; LIGHT EMISSION; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; QUANTUM THEORY; THERMOANALYSIS;

RAPID THERMAL ANNEALING (RTA); SI WELLS; SISI O2 MULTIPLE QUANTUM WELLS;

LIGHT EMITTING DIODES;

EID: 29044437722     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2074867     Document Type: Article

References (21)

1. For an overview, see L. Pavesi and D. J. Lockwood, Topics in Applied Physics: Silicon Photonics (Springer, Heidelberg, New York, 2004), Vol. 94.
2. L. T. Canham, Appl. Phys. Lett. 57, 1046 (1990).
3. P. F. Trwoga, A. J. Kenyon, and C. W. Witt, J. Appl. Phys. 83, 3789 (1998).
4. M. Zacharias, J. Heitmann, R. Scholz, U. Kahler, M. Schmidt, and J. Bläsing, Appl. Phys. Lett. 80, 661 (2002).
5. L. Pavesi and D. J. Lockwood, Topics in Applied Physics: Silicon Photonics (Springer, Heidelberg, New York, 2004), Vol. 94, p. 13.
6. L. T. Canham, M. R. Houlton, W. Y. Leong, C. Pickering, and J. M. Keen, J. Appl. Phys. 70, 422 (1991).
7. M. Y. Hao, H. Hwang, and J. C. Lee, Appl. Phys. Lett. 62, 1530 (1993).
8. L. Pavesi, L. Dal Negro, C. Mazzoleni, and F. Priolo, Nature (London) 408, 440 (2000).
9. L. Tsybeskov, K. D. Hirschmann, K. D. Hirschmann, S. P. Duttagupta, M. Zacharias, P. M. Fauchet, J. P. McCaffrey, and D. J. Lockwood, Appl. Phys. Lett. 72, 43 (1998).
10. M. E. Castagna, S. Coffa, M. Monaco, A. Mascara, and A. Messina, Mater. Sci. Eng., B 105, 83 (2003).
11. G. Franzo, A. Irrera, E. C. Moreira, M. Miritello, F. Iacona, D. Sanfilippo, G. DiStefano, P. G. Fallica, and F. Priolo, Appl. Phys. A: Mater. Sci. Process. 74, 1 (2002).
12. M. E. Castagna, S. Coffa, M. Monaco, L. Caristia, A. Messina, R. Mangano, and C. Bongiomo, Physica E (Amsterdam) 16, 547 (2003).
13. W. L. Ng, M. A. Lourenco, R. M. Gwilliam, S. Ledain, G. Shao, and K. P. Homewood, Nature (London) 410, 192 (2001).
14. M. Jo, K. Ishida, N. Yasuhara, Y. Sugawara, K. Kawamoto, and S. Fukatsu, Appl. Phys. Lett. 86, 103509 (2005).
15. M. A. Green, J. Zhao, A. Wang, P. J. Reece, and M. Gal, Nature (London) 412, 805 (2001).
16. P. D. Richard, R. J. Markunas, G. Lucovsky, G. G. Fountain, A. N. Mansour, and D. V. Tsu, J. Vac. Sci. Technol. A 3, 867 (1985).
17. R. Rölver, O. Winkler, M. Först, B. Spangenberg, and H. Kurz, Microelectron. Reliab. 45, 915 (2005).
18. M. Zacharias and P. Streitenberger, Phys. Rev. B 62, 8391 (2000).
19. J. F. Zhang, P. Watkinson, S. Taylor, and W. Eccleston, Appl. Surf. Sci. 39, 374 (1989).
20. D. J. Lockwood, Z. H. Lu, and J. M. Baribeau, Phys. Rev. Lett. 76, 539 (1996).
21. J. Zhao, G. Zhang, T. Trupke, A. Wang, F. Hudert, and M. A. Green, Appl. Phys. Lett. 85, 2830 (2004).