Nanosized silicon particles by inert gas arc evaporation

Nanostructured Materials

Volumn 12, Issue 1, 1999, Pages 203-206

  Hofmeister, H ^a   Kodderitzsch P ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AGGLOMERATION; CRYSTAL LATTICES; ELECTRON MICROSCOPY; EVAPORATION; HIGH RESOLUTION ELECTRON MICROSCOPY; INERT GASES; OXIDES; SEMICONDUCTING SILICON; SURFACE ROUGHNESS;

CRYSTALLINITY; INERT GAS ARC EVAPORATION;

NANOSTRUCTURED MATERIALS;

EID: 0032593612     PISSN: 09659773     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0965-9773(99)00099-9     Document Type: Article

References (13)

1. Tamura, H., Rückschloss, M., Virschem, T. and Veprek, S., Thin Solid Films, 1995, 255, 92.
2. Li, S., Silvers, S. and El-Shall, M.S., J. Phys. Chem. 1997, 101, 1794.
3. Li, S., Silvers, S. and El-Shall, M.S., Materials Research Symposium Proceedings Series, 1997, 452, 141.
4. Gösele, U. and Lehmann, V., Materials Chemistry and Physics, 1995, 40, 253.
5. Ludwig, M.H., Augustin, A., Hummel, R.E. and Gross, T., J. Appl. Phys., 1996,80,5318.
6. Zacharias, M., Dimova-Malinovska, D. and Stutzmann, M., Phil. Mag. B, 1996, 73, 799.
7. Shimizu-Iwayama, T., Nakao, S. and Saitoh, K., Nucl. Instr. Meth. Phys. Res. B, 1996, 120, 97.
8. Movtchan, I.A., Dreyfus, R.W., Marine, W., Sentis, M., Autric, M., Le Lay, G. and Merk, N., Thin Solid Films, 1995, 255, 286.
9. Dihn, L.N., Phys. Rev. B, 1996, 54, 5029.
10. Hofmeister, H., Dutta, J. and Hofmann, H., Phys. Rev. B, 1996, 54, 2856.
11. Hofmeister, H., Ködderitzsch, P. and Gösele, U., Ber. Bunsenges. Phys. Chem., 1997, 101, 1647.
12. Hofmeister, H., Ködderitzsch, P. and Dutta, J., J. Non-Crystalline Solids, 1998, 232-234, 182.
13. Liu, H.I., Biegelsen, D.K., Johnson, N.M., Ponce F.A. and Pease, R.F.W., J. Vac. Sci. Technol. B, 1993, 11, 2532.