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Volumn 101, Issue 14, 2012, Pages

Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission

(8) Young, Erin C a Wu, Feng a Romanov, Alexey E a,b,c Haeger, Daniel A a Nakamura, Shuji a Denbaars, Steven P a Cohen, Daniel A a Speck, James S a

a University of California (United States)

b IOFFE INSTITUTE (Russian Federation)

c UNIVERSITY OF TARTU (Estonia)

Author keywords

[No Author keywords available]

Indexed keywords

AL-CONCENTRATION; ALGAN; COHERENCY STRESS; DISLOCATION GENERATION; EMISSION WAVELENGTH; GAN SUBSTRATE; N-BUFFER LAYERS; NON-BASAL; SEMIPOLAR; SEMIPOLAR GAN; SLIP SYSTEM; THREADING DISLOCATION DENSITIES;

GALLIUM ALLOYS; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM NITRIDE;

EID: 84867517839 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4757423 Document Type: Article

Times cited : (20)

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