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Volumn 100, Issue 16, 2012, Pages

384 nm laser diode grown on a (202̄1) semipolar relaxed AlGaN buffer layer

(11) Haeger, Daniel A a Young, Erin C a Chung, Roy B a Wu, Feng a Pfaff, Nathan A a Tsai, Min a Fujito, Kenji b Denbaars, Steven P a Speck, James S a Nakamura, Shuji a Cohen, Daniel A a

a University of California (United States)

b MITSUBISHI CHEMICAL CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALN; ALUMINUM COMPOSITION; BASAL PLANES; COHERENCY STRESS; ELECTRICALLY INJECTED; HETERO INTERFACES; LASING WAVELENGTH; SEMIPOLAR; THREADING DISLOCATION; THREADING DISLOCATION DENSITIES; UV LASERS;

SAPPHIRE;

BUFFER LAYERS;

EID: 84859994583 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4704560 Document Type: Article

Times cited : (32)

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