Direct evidence of compositional pulling effect in AlxGa 1-xN epilayers

Journal of Crystal Growth

Volumn 290, Issue 1, 2006, Pages 225-228

  Lin, H Y ^a   Chen, Y F ^a   Lin, T Y ^b   Shih, C F ^c   Liu, K S ^b   Chen, N C ^d  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

^c NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^d CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

A1. Cathodoluminescence; A1. Pulling effect; B1. AlGaN

Indexed keywords

CATHODOLUMINESCENCE; CRYSTALLINE MATERIALS; ELECTRON ENERGY LEVELS; ENERGY DISPERSIVE SPECTROSCOPY; IMAGING TECHNIQUES; SEMICONDUCTING ALUMINUM COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

BAND GAP VARIATION; BAND GAPS; PULLING EFFECTS; SPATIAL COMPOSITION DISTRIBUTION;

ALUMINUM COMPOUNDS;

EID: 33645025801     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.01.021     Document Type: Article

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