Plastic relaxation and relaxed buffer layers for semiconductor epitaxy

Advances in Physics

Volumn 45, Issue 2, 1996, Pages 87-146

  Beanland, R ^a   Dunstan, D J ^b   Goodhew, P J ^c  

^a University of Surrey ^*  (United Kingdom)

^b UNIVERSITY OF SURREY   (United Kingdom)

^c UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; HETEROJUNCTIONS; MATHEMATICAL MODELS; RELAXATION PROCESSES; STRAIN; SUPERLATTICES; SURFACE ROUGHNESS;

DISLOCATION DENSITY; MATTHEWS MODEL; MISFIT RELIEF; PLASTIC RELAXATION; RELAXED BUFFER LAYERS;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0030105576     PISSN: 00018732     EISSN: 14606976     Source Type: Journal    
DOI: 10.1080/00018739600101477     Document Type: Article

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