Se-bias electroluminescence observation for reliability investigations of the InGaN light emitting diode

Microelectronic Engineering

Volumn 101, Issue , 2013, Pages 42-46

  Chen, Hsiang ^a   Yeh, Yih Min ^b   Liao, Chuan Hao ^a   Lin, Chun Wei ^a   Kao, Chuan Haur ^c   Lu, Tien Chang ^d  

^a NATIONAL CHI NAN UNIVERSITY   (Taiwan)

^b WuFeng University   (Taiwan)

^c CHANG GUNG UNIVERSITY   (Taiwan)

^d NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Electroluminescence; GaN LED; Hot electron; Leakage current; Optical characterization; Reverse bias

Indexed keywords

CURRENT DISTRIBUTION; CURRENT LEAKAGE; DEVICE FAILURES; DEVICE PERFORMANCE; ELECTRICAL MEASUREMENT; ELECTRICAL PERFORMANCE; ELEMENT ANALYSIS; FABRICATION PROCESS; HIGH ELECTRIC FIELDS; LED DEVICE; METAL CONTACTS; OPTICAL CHARACTERIZATION; OPTICAL CHARACTERIZATION TECHNIQUE; PROCESS VARIATION; RELIABILITY INVESTIGATIONS; RELIABILITY PROBLEMS; REVERSE BIAS; SCREENING TOOL; SURFACE TEMPERATURE MEASUREMENT;

ELECTRIC FIELDS; ELECTROLUMINESCENCE; GALLIUM NITRIDE; HOT ELECTRONS; INDUSTRIAL APPLICATIONS; LEAKAGE CURRENTS; RELIABILITY; SEMICONDUCTING SELENIUM COMPOUNDS; TEMPERATURE MEASUREMENT;

LIGHT EMITTING DIODES;

EID: 84866875484     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2012.08.017     Document Type: Article

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