Leakage current and reverse-bias luminescence in InGaN-based light-emitting diodes

Applied Physics Letters

Volumn 95, Issue 17, 2009, Pages

  Meneghini, M ^a   Trivellin, N ^a   Pavesi, M ^b   Manfredi, M ^b   Zehnder, U ^c   Hahn, B ^c   Meneghesso, G ^a   Zanoni, E ^a  

^a UNIVERSITY OF PADOVA   (Italy)

^b UNIVERSITY OF PARMA   (Italy)

^c OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRO-OPTICAL; ELECTRON HOLE PAIRS; EMISSION MICROSCOPY; QUANTUM WELL; REVERSE-BIAS; TUNNELING ,;

CURRENT DENSITY; LEAKAGE CURRENTS; LIGHT EMITTING DIODES; LUMINESCENCE; OPTICAL CORRELATION;

LIGHT;

EID: 70350733429     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3257368     Document Type: Article

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