Reliability of InGaN-based LEDs submitted to reverse-bias stress

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 7-8, 2010, Pages 2208-2210

  Meneghini, Matteo ^a   Trivellin, Nicola ^a   Butendeich, Rainer ^b   Zehnder, Ulrich ^b   Hahn, Berthold ^b   Meneghesso, Gaudenzio ^a   Zanoni, Enrico ^a  

^a UNIVERSITY OF PADOVA   (Italy)

^b OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; III-V SEMICONDUCTORS; LUMINESCENCE; NITRIDES;

CONDUCTION MECHANISM; DEGRADATION RATE; ELECTRO-OPTICAL CHARACTERISTICS; EMISSION MICROSCOPY; INGAN-BASED LED; LINEAR DEPENDENCE; LUMINESCENCE SIGNALS; REVERSE CURRENTS;

LIGHT EMITTING DIODES;

EID: 77955794705     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200983535     Document Type: Conference Paper

References (6)

1. M. Meneghini, L. Trevisanello, G. Meneghesso, and E. Zanoni, IEEE Trans.Mater. Devices Reliab. 8(2), 323-331, (2008).
2. X. A. Cao, P. Sandvik, S. LeBoeuf, and S. Arthur, Microelectron. Reliab. 43, 1987-1991 (2003).
3. H. Kuan, Jpn. J. Appl. Phys. 47, 1544 (2008).
4. S.-K. Jeon, J.-G. Lee, E.-H. Park, J. Jang, J.-G. Lim, S.-K. Kim, and J.-S. Park, Appl. Phys. Lett. 94, 131106 (2009).
5. Z.-Q. Fang, D.C. Reynolds, and D.C. Look, J. Electron. Mater. 29(4), 448 (2000).
6. X.A. Cao et al., Solid-State Electron. 46, 2291 (2002).