White-light electroluminescence from n-ZnO/p-GaN heterojunction light-emitting diodes at reverse breakdown bias

IEEE Transactions on Electron Devices

Volumn 58, Issue 11, 2011, Pages 3970-3975

  Chen, H C ^a   Chen, M J ^a   Huang, Y H ^a   Sun, W C ^a   Li, W C ^a   Yang, J R ^a   Kuan, H ^b   Shiojiri, M ^c  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^c KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Atomic layer deposition (ALD); gallium nitride; heterojunction; white light emitting diode (LED); zinc oxide

Indexed keywords

ACCEPTOR LEVELS; BLUE LIGHT; CHROMATICITY COORDINATES; DEEP LEVEL; WHITE LIGHT; WHITE LIGHT EMITTING DIODES; ZNO;

ATOMIC LAYER DEPOSITION; DIODES; ELECTROLUMINESCENCE; ELECTRON MOBILITY; ELECTRON TUNNELING; GALLIUM NITRIDE; HETEROJUNCTIONS; LIGHT; LIGHT EMISSION; ZINC OXIDE;

LIGHT EMITTING DIODES;

EID: 80054927952     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2164408     Document Type: Article

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