Reduction of reverse-bias leakage current in GaN-based Schottky-type light-emitting diodes by surface modification using the aluminum facepack technique

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 9, Issue 3-4, 2012, Pages 778-781

  Honda, Tohru ^a   Sakai, Naoyuki ^a   Komiyama, Shigetoshi ^a   Hayashi, Masato ^a   Igaki, Tatsuhiro ^a  

^a KOGAKUIN UNIVERSITY   (Japan)

Author keywords

Gallium nitride; GaN; MBE; MIS; MOS; Schottky; UV

Indexed keywords

AL FILMS; GAN; MOS; NITRIDE SURFACE; REVERSE-BIAS; SCHOTTKY; SCHOTTKY DIODES; UV;

ALUMINUM; GALLIUM ALLOYS; GALLIUM NITRIDE; LEAKAGE CURRENTS; LIGHT EMISSION; MANAGEMENT INFORMATION SYSTEMS; MOLECULAR BEAM EPITAXY; SCHOTTKY BARRIER DIODES;

LIGHT EMITTING DIODES;

EID: 84858810213     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201100387     Document Type: Article

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