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Volumn 83, Issue 12, 2003, Pages 2447-2449

Effect of thermal annealing of Ni/Au ohmic contact on the leakage current of GaN based light emitting diodes

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; GALLIUM NITRIDE; LEAKAGE CURRENTS; OHMIC CONTACTS; TRANSMISSION ELECTRON MICROSCOPY; X RAY SPECTROMETERS;

EID: 0142090035     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1601306     Document Type: Article
Times cited : (75)

References (18)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.