Electroluminescence studies under forward and reverse bias conditions of a nitride-rich GaN1-x Px SQW structure LED grown by laser-assisted metal-organic chemical vapor deposition

Solid-State Electronics

Volumn 47, Issue 3, 2003, Pages 523-527

  Kikawa, Junjiroh ^a   Yoshida, Seikoh ^a   Itoh, Yoshiteru ^a  

^a FURUKAWA ELECTRIC CO LTD   (Japan)

Author keywords

GaN; GaNP; Isoelectronic trap; LA MOCVD; LED; SQW

Indexed keywords

ELECTROLUMINESCENCE; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM COMPOUNDS;

OHMIC INGREDIENTS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0037343801     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00406-9     Document Type: Conference Paper

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