Analysis of defect-related localized emission processes in InGaN/GaN-based LEDs

IEEE Transactions on Electron Devices

Volumn 59, Issue 5, 2012, Pages 1416-1422

  Meneghini, Matteo ^a   Vaccari, Simone ^a   Trivellin, Nicola ^a   Zhu, Dandan ^b   Humphreys, Colin ^b   Butendheich, Rainer ^c   Leirer, Christian ^c   Hahn, Berthold ^c   Meneghesso, Gaudenzio ^a   Zanoni, Enrico ^a  

^a UNIVERSITY OF PADOVA   (Italy)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

Author keywords

Defect; electroluminescence (EL); gallium nitride; light emitting diode (LED); photoluminescence

Indexed keywords

BARRIER LAYERS; CURRENT CONDUCTION; ELECTRICAL CHARACTERIZATION; EMISSION PROCESS; GREEN LEDS; HIGH ACTIVATION ENERGY; LUMINESCENCE SIGNALS; RADIATIVE RECOMBINATION; REVERSE CURRENTS; REVERSE-BIAS; SPATIALLY RESOLVED ELECTROLUMINESCENCE; SPECTRAL REGION; THERMAL QUENCHING; THREADING DISLOCATION; YELLOW EMISSIONS; YELLOW LUMINESCENCE;

DEFECTS; DIODES; ELECTROLUMINESCENCE; GALLIUM NITRIDE; LIGHT; LUMINESCENCE; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS;

LIGHT EMITTING DIODES;

EID: 84860243307     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2186970     Document Type: Article

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