Damage of light-emitting diodes induced by high reverse-bias stress

Journal of Crystal Growth

Volumn 311, Issue 3, 2009, Pages 994-997

  Chen, N C ^a   Wang, Y N ^a   Wang, Y S ^b   Lien, W C ^a   Chen, Y C ^a  

^a CHANG GUNG UNIVERSITY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

A1. Defects; A3. Metal organic chemical vapor deposition; B1. Nitrides; B3. Light emitting diode

Indexed keywords

CORUNDUM; CURRENT DENSITY; DIODES; ELECTROSTATIC DEVICES; ELECTROSTATIC DISCHARGE; INDUSTRIAL CHEMICALS; LIGHT EMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; ORGANIC CHEMICALS; ORGANIC COMPOUNDS; ORGANIC LIGHT EMITTING DIODES (OLED); ORGANOMETALLICS; VAPORS;

A1. DEFECTS; A3. METAL ORGANIC CHEMICAL VAPOR DEPOSITION; B1. NITRIDES; B3. LIGHT-EMITTING DIODE; ELECTRO-STATIC DISCHARGES; INSULATING PROPERTIES; REVERSE BIAS; REVERSE CURRENTS; SAPPHIRE SUBSTRATES; SHORT PERIODS;

LIGHT EMITTING DIODES;

EID: 59749105352     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.09.123     Document Type: Article

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