Interface and bulk effects for bias-light-illumination instability in amorphous-In-Ga-Zn-O thin-film transistors

Journal of the Society for Information Display

Volumn 18, Issue 10, 2010, Pages 789-795

  Nomura, Kenji ^a   Kamiya, Toshio ^a   Hosono, Hideo ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

A In Ga Zn O; Bias stability; TFT; Transparent amorphous oxide semiconductor; Wet annealing

Indexed keywords

A-IN-GA-ZN-O; AMORPHOUS OXIDE SEMICONDUCTORS; BIAS STABILITY; TFT; WET ANNEALING;

AMORPHOUS FILMS; ANNEALING; DEFECTS; ELECTRIC FIELDS; EMISSION SPECTROSCOPY; STABILITY; ZINC;

THIN FILM TRANSISTORS;

EID: 77958158218     PISSN: 10710922     EISSN: None     Source Type: Journal    
DOI: 10.1889/JSID18.10.789     Document Type: Article

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