High-speed three-dimensional reciprocal-space mapping during molecular beam epitaxy growth of InGaAs

Journal of Applied Crystallography

Volumn 45, Issue 5, 2012, Pages 1046-1053

  Hu, Wen ^a   Suzuki, Hidetoshi ^b   Sasaki, Takuo ^c   Kozu, Miwa ^d   Takahasi, Masamitu ^a,d  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

^b UNIVERSITY OF MIYAZAKI   (Japan)

^c TOYOTA TECHNOLOGICAL INSTITUTE   (Japan)

^d UNIVERSITY OF HYOGO   (Japan)

Author keywords

high speed mapping; InGaAs thin films; molecular beam epitaxy; real time measurement; strain relaxation; surface diffraction; three dimensional reciprocal space mapping

Indexed keywords

CO-ORDINATE SYSTEM; CONSECUTIVE IMAGES; CONTINUOUS ROTATION; DATA CALIBRATION; GAAS(001); HIGH-SPEED; INGAAS/GAAS; RAPID MAPPING; REAL TIME MEASUREMENTS; REAL TIME MONITORING; SHORT PERIODS; SURFACE DIFFRACTION; THREE-DIMENSIONAL RECIPROCAL-SPACE MAPPING; TIME RESOLUTION;

DIFFRACTION; EPITAXIAL GROWTH; FILM GROWTH; GALLIUM; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; MONOLAYERS; SEMICONDUCTING INDIUM; SEMICONDUCTOR GROWTH; STRAIN RELAXATION; THIN FILMS; VAPOR DEPOSITION;

THREE DIMENSIONAL;

EID: 84866556666     PISSN: 00218898     EISSN: 16005767     Source Type: Journal    
DOI: 10.1107/S0021889812036175     Document Type: Article

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