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We have also studied the case of GaAs/GaP [111] NWs which are known for their stacking faults along the growth direction. In such a case, the CDI signal recorded is essentially be a function of the faults nature and distribution along the NW axis, instead of the shape and elastic deformation of the wire.
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We have also studied the case of GaAs/GaP [111] NWs which are known for their stacking faults along the growth direction. In such a case, the CDI signal recorded is essentially be a function of the faults nature and distribution along the NW axis, instead of the shape and elastic deformation of the wire.
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Note that this approach is only correct as long as the crystal consists of complete unit cells-a reasonable approximation as long as the dimensions of the wire are much larger than the unit-cell parameters.
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As the NW is much longer (several μm vs 100nm), the FT of its shape is essentially 2D.
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As the NW is much longer (several μm vs 100nm), the FT of its shape is essentially 2D.
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19
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65649145677
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The optimization used 200 to 400 cycles, with a fixed square support more than twice the size of the NW and was repeated 400 times to avoid stagnation.
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The optimization used 200 to 400 cycles, with a fixed square support more than twice the size of the NW and was repeated 400 times to avoid stagnation.
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