In situ real-time X-ray reciprocal space mapping during InGaAs/GaAs growth for understanding strain relaxation mechanisms

Applied Physics Express

Volumn 2, Issue 8, 2009, Pages

  Sasaki, Takuo ^a   Suzuki, Hidetoshi ^a   Sai, Akihisa ^a   Lee, Jong Han ^a   Takahasi, Masamitu ^b   Fujikawa, Seiji ^b   Arafune, Koji ^c   Kamiya, Itaru ^a   Ohshita, Yoshio ^a   Yamaguchi, Masafumi ^a  

^a TOYOTA TECHNOLOGICAL INSTITUTE   (Japan)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

^c UNIVERSITY OF HYOGO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL QUALITIES; HIGH RESOLUTION; IN-SITU; INGAAS/GAAS; LATTICE-MISMATCHED; REAL-TIME X-RAY DIFFRACTION; RECIPROCAL SPACE MAPS; RESIDUAL STRAINS; STRAIN RELAXATION MECHANISM; TRANSIENT BEHAVIOR; TRANSITION POINT; X-RAY RECIPROCAL SPACE MAPPING;

DIFFRACTION; DISLOCATIONS (CRYSTALS); GALLIUM; STRAIN CONTROL; STRAIN RELAXATION;

EPITAXIAL GROWTH;

EID: 68949097410     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.2.085501     Document Type: Article

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