|
|
Volumn 323, Issue 1, 2011, Pages 13-16
|
|
Growth temperature dependence of strain relaxation during InGaAs/GaAs(0 0 1) heteroepitaxy
a
|
|
Author keywords
Molecular beam epitaxy; Semiconducting IIIV materials; Stresses; X ray diffraction
|
|
Indexed keywords
CRYSTAL QUALITIES;
DISLOCATION MOTION;
GROWTH-TEMPERATURE DEPENDENCE;
HETEROEPITAXY;
IN-SITU;
INGAAS/GAAS;
KINETIC MODELS;
RATE COEFFICIENTS;
RESIDUAL STRAINS;
SEMICONDUCTING IIIV MATERIALS;
STRAIN RELAXATION MODELS;
X-RAY RECIPROCAL SPACE MAPPING;
DISLOCATIONS (CRYSTALS);
EPITAXIAL GROWTH;
FILM GROWTH;
GROWTH TEMPERATURE;
MOLECULAR BEAM EPITAXY;
MOLECULAR BEAMS;
SEMICONDUCTOR GROWTH;
STRAIN RELAXATION;
SUPERCONDUCTING FILMS;
TEMPERATURE DISTRIBUTION;
X RAY DIFFRACTION;
STRAIN RATE;
|
|
EID: 79958006839
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.10.005 Document Type: Article |
|
Times cited : (21)
|
|
References (12)
|
