Finite size effects on the gate leakage current in graphene nanoribbon field-effect transistors

Nanotechnology

Volumn 20, Issue 27, 2009, Pages

  Mao, Ling Feng ^a  

^a SOOCHOW UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL ELECTRONS; CHANNEL WIDTHS; DEVICE STRUCTURES; ENERGY DISTRIBUTIONS; FINITE SIZE EFFECT; GATE OXIDE RELIABILITY; GATE-LEAKAGE CURRENT; GRAPHENE; GRAPHENE NANO-RIBBON; HIGH-ENERGY ELECTRON; NANORIBBON; NUMERICAL CALCULATION; TUNNELING CURRENT;

ELECTRIC POWER DISTRIBUTION; GATE DIELECTRICS; ION BEAMS; MESFET DEVICES; MOS CAPACITORS; SIZE DETERMINATION;

FIELD EFFECT TRANSISTORS;

GRAPHENE; NANORIBBON;

ARTICLE; CHANNEL GATING; CHEMICAL STRUCTURE; CONTROLLED STUDY; ELECTRIC CURRENT; ELECTRON; ENERGY YIELD; FINITE ELEMENT ANALYSIS; PARTICLE SIZE; PRIORITY JOURNAL; RELIABILITY; SEMICONDUCTOR;

EID: 67649371233     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/27/275203     Document Type: Article

References (13)

1. Dimitrakopoulos C D and Mascaro D J 2001 IBM J. Res. Dev. 45 11
2. Baughman R H, Zakhidov A A and de Heer W A 2002 Science 297 787
3. Geim A K and Novoselov K S 2007 Nat. Mater. 6 183
4. Berger C et al 2006 Science 312 1191
5. Rycerz A, Tworzydlo J and Beenakker C W J 2007 Nat. Phys. 3 172
6. Lemme M C, Echtermeyer T J, Baus M and Kurz H 2007 IEEE Electron Device Lett. 28 282
7. Huard B, Sulpizio J A, Stander N, Todd K, Yang B and Goldhaber-Gordon D 2007 Phys. Rev. Lett. 98 236803
8. Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Crigorieva I V and Firsov A A 2004 Science 306 666
9. Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Gregorieva I V and Firsov A A 2005 Nature 438 197
10. Zhang Y B, Tan Y W, Stormer H L and Kim P 2005 Nature 438 201
11. Heersche H B, Jarillo-Herrero P, Oostinga J B, Vandersypen L M K and Morpurgo A F 2007 Nature 446 56
12. Bagwell P F and Orlando T P 1989 Phys. Rev. B 40 1456
13. Buonocore F, Trani F, Ninno D, Di Matteo A, Cantele G and Iadonis G 2008 Nanotechnology 19 025711