Microwave switching of graphene field effect transistor at and far from the Dirac point

Applied Physics Letters

Volumn 96, Issue 10, 2010, Pages

  Deligeorgis, G ^a   Dragoman, M ^b   Neculoiu, D ^c   Dragoman, D ^d   Konstantinidis, G ^a   Cismaru, A ^b   Plana, R ^e  

^a INSTITUTE OF COMPUTER SCIENCE   (Greece)

^b NATIONAL INSTITUTE FOR RESEARCH AND DEVELOPMENT IN MICROTECHNOLOGIES   (Romania)

^c UNIVERSITY POLITEHNICA OF BUCHAREST   (Romania)

^d UNIVERSITY OF BUCHAREST   (Romania)

^e LAAS CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE DEVICES; CARRIER DENSITY; DIRAC POINT; MAXIMUM STABLE GAIN; MICROWAVE EXPERIMENTS; MICROWAVE SWITCH; PASSIVE DEVICES; TOP-GATE;

AMPLIFICATION; GRAPHENE; GRAPHITE; MICROWAVES; SOUND REPRODUCTION;

FIELD EFFECT TRANSISTORS;

EID: 77949662905     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3358124     Document Type: Article

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