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Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 29, Issue 3, 2011, Pages

Ga-doped ZnO grown by pulsed laser deposition in H2: The roles of Ga and H

(5) Look, David C a Droubay, Timothy C b McCloy, John S b Zhu, Zihua b Chambers, Scott A b,c

a WRIGHT STATE UNIVERSITY (United States)

b PACIFIC NORTHWEST NATIONAL LABORATORY (United States)

c American Vacuum Society (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONVENTIONAL METHODS; DONOR AND ACCEPTOR; DONOR CONCENTRATIONS; FORMING GAS; GA-DOPED ZNO; GROWTH CHAMBER; H-DONORS; POST-GROWTH ANNEAL; ROOM TEMPERATURE; SCATTERING MODEL; THICK SAMPLES; ZNO;

CONDUCTIVE FILMS; DEPOSITION; GALLIUM; PULSED LASER DEPOSITION; ZINC OXIDE;

PULSED LASERS;

EID: 79955129917 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.3523296 Document Type: Article

Times cited : (11)

References (10)

1
- 17044403452
- Transparent conducting oxide semiconductors for transparent electrodes
- DOI 10.1088/0268-1242/20/4/004
- T. Minami, Semicond. Sci. Technol. 0268-1242 20, S35 (2005). 10.1088/0268-1242/20/4/004 (Pubitemid 40496724)
- (2005) Semiconductor Science and Technology , vol.20 , Issue.4
- Minami, T.¹

2
- 0035932264
- Recent advances in ZnO materials and devices
- DOI 10.1016/S0921-5107(00)00604-8, PII S0921510700006048
- D. C. Look, Mater. Sci. Eng., B 0921-5107 80, 383 (2001). 10.1016/S0921-5107(00)00604-8 (Pubitemid 32331341)
- (2001) Materials Science and Engineering B: Solid-State Materials for Advanced Technology , vol.80 , Issue.1-3 , pp. 383-387
- Look, D.C.¹

3
- 6444220325
- 0079-6425, 10.1016/j.pmatsci.2004.04.001
- S. J. Pearton, D. P. Norton, K. Ip, Y. W. Heo, and T. Steiner, Prog. Mater. Sci. 0079-6425 50, 293 (2005). 10.1016/j.pmatsci.2004.04.001
- (2005) Prog. Mater. Sci. , vol.50 , pp. 293
- Pearton, S.J.¹ Norton, D.P.² Ip, K.³ Heo, Y.W.⁴ Steiner, T.⁵

4
- 25144462707
- A comprehensive review of ZnO materials and devices
- DOI 10.1063/1.1992666, 041301
- Ü. Özgür, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doǧan, V. Avrutin, S. J. Cho, and H. Morko̧, J. Appl. Phys. 0021-8979 98, 041301 (2005). 10.1063/1.1992666 (Pubitemid 41348664)
- (2005) Journal of Applied Physics , vol.98 , Issue.4 , pp. 1-103
- Ozgur, U.¹ Alivov, Ya.I.² Liu, C.³ Teke, A.⁴ Reshchikov, M.A.⁵ Dogan, S.⁶ Avrutin, V.⁷ Cho, S.-J.⁸ Morko, H.⁹

5
- 76749092308
- 0003-6951, 10.1063/1.3310043
- D. C. Look, K. D. Leedy, D. H. Tomich, and B. Bayraktaroglu, Appl. Phys. Lett. 0003-6951 96, 062102 (2010). 10.1063/1.3310043
- (2010) Appl. Phys. Lett. , vol.96 , pp. 062102
- Look, D.C.¹ Leedy, K.D.² Tomich, D.H.³ Bayraktaroglu, B.⁴

6
- 77953978270
- 0272-9172.
- D. C. Look, K. Ghosh, and K. D. Leedy, Mater. Res. Soc. Symp. Proc. 0272-9172 1201, 35 (2010).
- (2010) Mater. Res. Soc. Symp. Proc. , vol.1201 , pp. 35
- Look, D.C.¹ Ghosh, K.² Leedy, K.D.³

7
- 42349092487
- Electronic properties of H and D doped ZnO epitaxial films
- DOI 10.1063/1.2911723
- Y. J. Li, T. C. Kasper, T. C. Droubay, Z. Zhu, V. Shutthanandan, P. Nachimuthu, and S. A. Chambers, Appl. Phys. Lett. 0003-6951 92, 152105 (2008). 10.1063/1.2911723 (Pubitemid 351555703)
- (2008) Applied Physics Letters , vol.92 , Issue.15 , pp. 152105
- Li, Y.J.¹ Kaspar, T.C.² Droubay, T.C.³ Zhu, Z.⁴ Shutthanandan, V.⁵ Nachimuthu, P.⁶ Chambers, S.A.⁷

8
- 51849108980
- 0021-8979, 10.1063/1.2975219
- Y. J. Li, T. C. Kasper, T. C. Droubay, A. G. Joly, P. Nachimuthu, Z. Zhu, V. Shutthanandan, and S. A. Chambers, J. Appl. Phys. 0021-8979 104, 053711 (2008). 10.1063/1.2975219
- (2008) J. Appl. Phys. , vol.104 , pp. 053711
- Li, Y.J.¹ Kasper, T.C.² Droubay, T.C.³ Joly, A.G.⁴ Nachimuthu, P.⁵ Zhu, Z.⁶ Shutthanandan, V.⁷ Chambers, S.A.⁸

9
- 46449093304
- 0734-2101, 10.1116/1.2891261
- J. N. Duenow, T. A. Gessert, D. M. Wood, A. C. Dillon, and T. J. Coutts, J. Vac. Sci. Technol. A 0734-2101 26, 692 (2008). 10.1116/1.2891261
- (2008) J. Vac. Sci. Technol. A , vol.26 , pp. 692
- Duenow, J.N.¹ Gessert, T.A.² Wood, D.M.³ Dillon, A.C.⁴ Coutts, T.J.⁵

10
- 0038609631
- 0031-9007, 10.1103/PhysRevLett.90.197402
- N. H. Nickel and K. Fleischer, Phys. Rev. Lett. 0031-9007 90, 197402 (2003). 10.1103/PhysRevLett.90.197402
- (2003) Phys. Rev. Lett. , vol.90 , pp. 197402
- Nickel, N.H.¹ Fleischer, K.²

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