High performance horizontal gate-all-around silicon nanowire field-effect transistors

Nanotechnology

Volumn 23, Issue 39, 2012, Pages

  Shirak, O ^a   Shtempluck, O ^a   Kotchtakov, V ^a   Bahir, G ^a   Yaish, Y E ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

BUILDING BLOCKES; EFFECTIVE HEIGHT; ELECTRICAL APPLICATIONS; ELECTRICAL MEASUREMENT; ELECTROSTATIC COUPLING; GATE-ALL-AROUND; HIGH PERFORMANCE CHARACTERISTICS; LOW THRESHOLD VOLTAGE; METAL OXIDE SEMICONDUCTOR; NANOMETER MATERIAL; ON/OFF CURRENT RATIO; SCHOTTKY BARRIERS; SEMICONDUCTING NANOWIRES; SILICON NANOWIRE FIELD-EFFECT TRANSISTORS; SILICON NANOWIRES; SUBMICRON; SUBTHRESHOLD SLOPE; SURROUNDING-GATE;

FIELD EFFECT TRANSISTORS;

NANOWIRES;

EID: 84866338413     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/23/39/395202     Document Type: Article

References (24)

1. Zhu S, Van Meirhaeghe R L, Forment S, Ru G and Li B 2004 Solid-State Electron. 48 29
2. Zhang M, Knoch J, Appenzeller J and Mantl S 2007 IEEE Electron Device Lett. 28 223
3. Appenzeller J, Radosavljevic M, Knoch J and Avouris P 2004 Phys. Rev. Lett. 92 048301
4. Peng J W, Lee G C, Albert Liang G C, Singh N, Zhu S Y, Lo G Q and Kwong D L 2008 Appl. Phys. Lett. 93 073503
5. Hu Y, Xiang J, Liang G, Yan H and Lieber C M 2008 Nano Lett. 8 925
6. Singh N et al 2006 IEEE Electron Device Lett. 27 383
7. Westwater J, Gosain D P, Tomiya S, Usui S and Ruda H 1997 J. Vac. Sci. Technol. B 15 554
8. Morales A M and Lieber C M 1998 Science 279 208
9. Weber W M et al 2006 Nano Lett. 6 2660
10. Yaish Y E, Katsman A, Cohen G M and Beregovsky M 2011 J. Appl. Phys. 109 094303
11. Javey A, Nam S, Friedman R S, Yan H and Lieber C M 2007 Nano Lett. 7 773
12. Shirak O, Kotchtakov V, Shtumpluk O, Bahir G and Yaish Y E 2012 at press
13. Calahorra Y, Shirak O, Kotchtakov V, Shtumpluk O and Yaish Y E 2012 at press
14. Appenzeller J, Knoch J, Bjork M T, Riel H, Schmid H and Riess W 2008 IEEE Trans. Electron Devices 55 2827
15. Cohen G M, Rooks M J, Chu J O, Laux S E, Solomon P M, Ott J A, Miller R J and Haensch W 2007 Appl. Phys. Lett. 90 233110
16. Chau R, Datta S, Doczy M, Doyle B, Jin J, Kavalieros J, Majumdar A, Metz M and Radosavljevic M 2005 IEEE Trans. Nanotechnol. 4 153
17. Taur Y and Ning T H 1998 Fundamental of Modern VLSI Devices (Cambridge: Cambridge University Press)
18. Cui Y, Zhong Z, Wang D, Wang W and Lieber C 2003 Nano Lett. 3 149
19. Lin Y-C, Lu K-C, Wu W-W, Bai J, Chen L J, Tu K N and Huang Y 2008 Nano Lett. 8 913
20. Chau R, Datta S, Doczy M, Doyle B, Kavalieros J and Metz M 2004 IEEE Electron Device Lett. 25 408
21. Knoch J, Zhang M, Mantl S and Appenzeller J 2006 IEEE Trans. Electron Devices 53 1669
22. Shirak O, Kotchtakov V, Shtumpluk O, Bahir G, Cohen G M and Yaish Y E 2012 at press
23. Iniguez B, Jimenez D, Roig J, Hamid H, Marsal L and Pallares J 2005 IEEE Trans. Electron Devices 52 1868
24. Xiang J, Lu W, Hu Y, Wu Y, Yan H and Lieber C 2006 Nature 441 489