SCOPUS 정보 검색 플랫폼

Journal of Applied Physics

Volumn 109, Issue 9, 2011, Pages

Kinetics of nickel silicide growth in silicon nanowires: From linear to square root growth

(4) Yaish, Y E a Katsman, A a Cohen, G M b Beregovsky, M a

a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY (Israel)

b IBM T J WATSON RESEARCH CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; ANNEALING TIME; AXIAL GROWTH; DIFFUSION MODEL; ELECTRICAL RESISTANCE MEASUREMENT; EXPERIMENTAL DATA; FULLY SILICIDED; HIGH-RESOLUTION SCANNING ELECTRON MICROSCOPIES; NICKEL SILICIDE; SELECTED AREA DIFFRACTION; SILICIDE FORMATION; SILICON NANOWIRES; SOURCE AND DRAINS; SQUARE ROOTS; TIME DEPENDENCE; TIME DEPENDENCY; WIRE DIAMETER; WIRE PARAMETERS;

ATOMIC FORCE MICROSCOPY; ELECTRIC WIRE; ENERGY DISPERSIVE SPECTROSCOPY; GROWTH KINETICS; HIGH RESOLUTION ELECTRON MICROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; NANOWIRES; NICKEL; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; WIRE;

SILICIDES;

EID: 79959498931 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3574650 Document Type: Article

Times cited : (37)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.