P-type ZnO thin films achieved by N + ion implantation through dynamic annealing process

Applied Physics Letters

Volumn 101, Issue 11, 2012, Pages

  Myers, M A ^a   Myers, M T ^a   General, M J ^a   Lee, J H ^b   Shao, L ^a,b   Wang, H ^a,b  

^a Department of Electrical and Computer Engineering   (United States)

^b TEXAS A AND M UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DYNAMIC ANNEALING; FLUENCES; HALL MEASUREMENTS; ION IMPLANTATION AT ELEVATED TEMPERATURES; MICRO-STRUCTURAL; N ION IMPLANTATION; P TYPE ZNO THIN FILM; P-TYPE; POST-IMPLANTATION; ZNO FILMS; ZNO THIN FILM;

ELECTRON MICROSCOPY; METALLIC FILMS; OPTICAL FILMS; PULSED LASER DEPOSITION; SAPPHIRE;

ION IMPLANTATION;

EID: 84866332747     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4751467     Document Type: Article

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