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Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 29, Issue 3, 2011, Pages

Electrical and microstructural properties of N+ ion-implanted ZnO and ZnO:Ag thin films

(7) Myers, Michelle A a Myers, Michael T b Tsai, Chen Fong a Lee, Joon Hwan a Lu, Tianlin a Shao, Lin b Wang, Haiyan a

a TEXAS A AND M UNIVERSITY (United States)

b Department of Electrical and Computer Engineering (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT ANNIHILATION; DEFECT CLUSTERING; DOPED ZNO; ELEVATED TEMPERATURE; GRAIN SIZE; HALL MEASUREMENTS; IN-VACUUM; LOW ENERGY ION IMPLANTATION; MICRO-STRUCTURAL; MICROSTRUCTURAL PROPERTIES; P-TYPE; ROOM TEMPERATURE; ZNO; ZNO FILMS;

DOPING (ADDITIVES); ELECTRIC PROPERTIES; HOLE CONCENTRATION; ION IMPLANTATION; METALLIC FILMS; OXYGEN; PULSED LASER DEPOSITION; SURFACE DEFECTS; SURFACE ROUGHNESS; VACUUM; ZINC OXIDE;

SILVER;

EID: 79955165511 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.3554836 Document Type: Article

Times cited : (2)

References (40)

1
- 0035932264
- Recent advances in ZnO materials and devices
- DOI 10.1016/S0921-5107(00)00604-8, PII S0921510700006048
- D. C. Look, Mater. Sci. Eng., B 0921-5107 80, 383 (2001). 10.1016/S0921-5107(00)00604-8 (Pubitemid 32331341)
- (2001) Materials Science and Engineering B: Solid-State Materials for Advanced Technology , vol.80 , Issue.1-3 , pp. 383-387
- Look, D.C.¹

2
- 19944421735
- Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO
- DOI 10.1038/nmat1284
- A. Tsukazaki, Nature Mater. 1476-1122 4, 42 (2005). 10.1038/nmat1284 (Pubitemid 40021000)
- (2005) Nature Materials , vol.4 , Issue.1 , pp. 42-45
- Tsukazaki, A.¹ Ohtomo, A.² Onuma, T.³ Ohtani, M.⁴ Makino, T.⁵ Sumiya, M.⁶ Ohtani, K.⁷ Chichibu, S.F.⁸ Fuke, S.⁹ Segawa, Y.¹⁰ Ohno, H.¹¹ Koinuma, H.¹² Kawasaki, M.¹³

3
- 34548622769
- 0370-1972, 10.1002/pssb.200743072
- C. Klingshirn, Phys. Status Solidi B 0370-1972 244, 3027 (2007). 10.1002/pssb.200743072
- (2007) Phys. Status Solidi B , vol.244 , pp. 3027
- Klingshirn, C.¹

4
- 0018495392
- Optical and electrical properties of ZnO films prepared by spray pyrolysis for solar cell applications
- DOI 10.1116/1.570167
- J. Aranovich, A. Ortiz, and R. H. Bube, J. Vac. Sci. Technol. 0022-5355 16, 994 (1979). 10.1116/1.570167 (Pubitemid 10468366)
- (1979) Journal of vacuum science & technology , vol.16 , Issue.4 , pp. 994-1003
- Aranovich Julio¹ Ortiz Armando² Bube Richard, H.³

5
- 3242724267
- 1071-1023, 10.1116/1.1714985
- S. J. Pearton, D. P. Norton, K. Ip, Y. W. Heo, and T. Steiner, J. Vac. Sci. Technol. B 1071-1023 22, 932 (2004). 10.1116/1.1714985
- (2004) J. Vac. Sci. Technol. B , vol.22 , pp. 932
- Pearton, S.J.¹ Norton, D.P.² Ip, K.³ Heo, Y.W.⁴ Steiner, T.⁵

6
- 0032375160
- Transparent conducting ZnO thin films prepared by XeCl excimer laser ablation
- DOI 10.1116/1.581085
- M. Hiramatsu, K. Imaeda, N. Horio, and M. Nawata, J. Vac. Sci. Technol. A 0734-2101 16, 669 (1998). 10.1116/1.581085 (Pubitemid 128046783)
- (1998) Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films , vol.16 , Issue.2 , pp. 669-673
- Hiramatsu, M.¹ Imaeda, K.² Horio, N.³ Nawata, M.⁴

7
- 79953839386
- 1071-1023, 10.1116/1.3089375
- D. C. Look, G. C. Farlow, F. Yaqoob, L. H. Vanamurthy, and M. Huang, J. Vac. Sci. Technol. B 1071-1023 27, 1593 (2009). 10.1116/1.3089375
- (2009) J. Vac. Sci. Technol. B , vol.27 , pp. 1593
- Look, D.C.¹ Farlow, G.C.² Yaqoob, F.³ Vanamurthy, L.H.⁴ Huang, M.⁵

8
- 0037104275
- 0556-2805, 10.1103/PhysRevB.66.073202
- C. H. Park, S. B. Zhang, and S. H. Wei, Phys. Rev. B 0556-2805 66, 073202 (2002). 10.1103/PhysRevB.66.073202
- (2002) Phys. Rev. B , vol.66 , pp. 073202
- Park, C.H.¹ Zhang, S.B.² Wei, S.H.³

9
- 0010059052
- 0556-2805, 10.1103/PhysRevB.63.075205
- S. B. Zhang, S. -H. Wei, and A. Zunger, Phys. Rev. B 0556-2805 63, 075205 (2001). 10.1103/PhysRevB.63.075205
- (2001) Phys. Rev. B , vol.63 , pp. 075205
- Zhang, S.B.¹ Wei, S.-H.² Zunger, A.³

10
- 3042855138
- 0003-6951, 10.1063/1.1763640
- C. C. Lin, S. Y. Chen, S. Y. Cheng, and H. -Y. Lee, Appl. Phys. Lett. 0003-6951 84, 5040 (2004). 10.1063/1.1763640
- (2004) Appl. Phys. Lett. , vol.84 , pp. 5040
- Lin, C.C.¹ Chen, S.Y.² Cheng, S.Y.³ Lee, H.-Y.⁴

11
- 44649090014
- 0168-583X, 10.1016/j.nimb.2008.03.148
- K. Wang, Z. Ding, T. Chen, D. Chen, S. Yao, and Z. Fu, Nucl. Instrum. Methods Phys. Res. B 0168-583X 266, 2962 (2008). 10.1016/j.nimb.2008.03.148
- (2008) Nucl. Instrum. Methods Phys. Res. B , vol.266 , pp. 2962
- Wang, K.¹ Ding, Z.² Chen, T.³ Chen, D.⁴ Yao, S.⁵ Fu, Z.⁶

12
- 68349128860
- 1071-1023, 10.1116/1.3151829
- T. Zaidi, A. Melton, W. E. Fenwick, and I. Ferguson, J. Vac. Sci. Technol. B 1071-1023 27, 1904 (2009). 10.1116/1.3151829
- (2009) J. Vac. Sci. Technol. B , vol.27 , pp. 1904
- Zaidi, T.¹ Melton, A.² Fenwick, W.E.³ Ferguson, I.⁴

13
- 79956028331
- Production of nitrogen acceptors in ZnO by thermal annealing
- DOI 10.1063/1.1450041
- N. Y. Garces, N. C. Giles, L. E. Halliburton, G. Cantwell, D. B. Eason, D. C. Reynolds, and D. C. Look, Appl. Phys. Lett. 0003-6951 80, 1334 (2002). 10.1063/1.1450041 (Pubitemid 34217600)
- (2002) Applied Physics Letters , vol.80 , Issue.8 , pp. 1334
- Garces, N.Y.¹ Giles, N.C.² Halliburton, L.E.³ Cantwell, G.⁴ Eason, D.B.⁵ Reynolds, D.C.⁶ Look, D.C.⁷

14
- 79958230334
- 0003-6951, 10.1063/1.1504875
- D. C. Look, D. C. Reynolds, C. W. Litton, R. L. Jones, D. B. Eason, and G. Cantwell, Appl. Phys. Lett. 0003-6951 81, 1830 (2002). 10.1063/1.1504875
- (2002) Appl. Phys. Lett. , vol.81 , pp. 1830
- Look, D.C.¹ Reynolds, D.C.² Litton, C.W.³ Jones, R.L.⁴ Eason, D.B.⁵ Cantwell, G.⁶

15
- 68349135606
- 1071-1023, 10.1116/1.3167363
- T. Yen, M. DiNezza, A. Haungs, S. J. Kim, W. A. Anderson, and A. N. Cartwright, J. Vac. Sci. Technol. B 1071-1023 27, 1943 (2009). 10.1116/1.3167363
- (2009) J. Vac. Sci. Technol. B , vol.27 , pp. 1943
- Yen, T.¹ Dinezza, M.² Haungs, A.³ Kim, S.J.⁴ Anderson, W.A.⁵ Cartwright, A.N.⁶

16
- 33644988216
- 0003-6951, 10.1063/1.2186508
- H. T. Wang, Appl. Phys. Lett. 0003-6951 88, 102107 (2006). 10.1063/1.2186508
- (2006) Appl. Phys. Lett. , vol.88 , pp. 102107
- Wang, H.T.¹

17
- 77952980433
- 0021-8979, 10.1063/1.3380592
- J. Kennedy, D. A. Carder, A. Markwitz, and R. J. Reeves, J. Appl. Phys. 0021-8979 107, 103518 (2010). 10.1063/1.3380592
- (2010) J. Appl. Phys. , vol.107 , pp. 103518
- Kennedy, J.¹ Carder, D.A.² Markwitz, A.³ Reeves, R.J.⁴

18
- 0042842376
- 0003-6951, 10.1063/1.1591064
- K. K. Kim, H. S. Kim, D. K. Hwang, J. H. Lim, and S. J. Park, Appl. Phys. Lett. 0003-6951 83, 63 (2003). 10.1063/1.1591064
- (2003) Appl. Phys. Lett. , vol.83 , pp. 63
- Kim, K.K.¹ Kim, H.S.² Hwang, D.K.³ Lim, J.H.⁴ Park, S.J.⁵

19
- 19944433143
- Production and recovery of defects in phosphorus-implanted ZnO
- DOI 10.1063/1.1821636, 013528
- Z. Q. Chen, A. Kawasuso, Y. Xu, H. Naramoto X. L. Yuan, T. Sekiguchi, R. Suzuki, and T. Ohdaira, J. Appl. Phys. 0021-8979 97, 013528 (2005). 10.1063/1.1821636 (Pubitemid 40191787)
- (2005) Journal of Applied Physics , vol.97 , Issue.1 , pp. 0135281-0135286
- Chen, Z.Q.¹ Kawasuso, A.² Xu, Y.³ Naramoto, H.⁴ Yuan, X.L.⁵ Sekiguchi, T.⁶ Suzuki, R.⁷ Ohdaira, T.⁸

20
- 28444466200
- Thermal stability of ion-implanted ZnO
- DOI 10.1063/1.2140481, 231912
- V. A. Coleman, H. H. Tan, C. Jagadish, S. O. Kucheyev, and J. Zou, Appl. Phys. Lett. 0003-6951 87, 231912 (2005). 10.1063/1.2140481 (Pubitemid 41741066)
- (2005) Applied Physics Letters , vol.87 , Issue.23 , pp. 1-2
- Coleman, V.A.¹ Tan, H.H.² Jagadish, C.³ Kucheyev, S.O.⁴ Zou, J.⁵

21
- 0033717519
- 0022-0248, 10.1016/S0022-0248(00)00437-1
- Y. R. Ryu, S. Zhu, D. C. Look, J. M. Wrobel, H. M. Jeong, and H. W. White, J. Cryst. Growth 0022-0248 216, 330 (2000). 10.1016/S0022-0248(00)00437-1
- (2000) J. Cryst. Growth , vol.216 , pp. 330
- Ryu, Y.R.¹ Zhu, S.² Look, D.C.³ Wrobel, J.M.⁴ Jeong, H.M.⁵ White, H.W.⁶

22
- 28344440203
- High-mobility Sb-doped p-type ZnO by molecular-beam epitaxy
- DOI 10.1063/1.2089183, 152101
- F. X. Xiu, Z. Yang, L. J. Mandalapu, D. T. Zhao, J. L. Liu, and W. P. Beyermann, Appl. Phys. Lett. 0003-6951 87, 152101 (2005). 10.1063/1.2089183 (Pubitemid 41717147)
- (2005) Applied Physics Letters , vol.87 , Issue.15 , pp. 1-3
- Xiu, F.X.¹ Yang, Z.² Mandalapu, L.J.³ Zhao, D.T.⁴ Liu, J.L.⁵ Beyermann, W.P.⁶

23
- 33748703884
- Control of p- and n-type conductivities in Li-doped ZnO thin films
- DOI 10.1063/1.2354034
- J. G. Lu, Appl. Phys. Lett. 0003-6951 89, 112113 (2006). 10.1063/1.2354034 (Pubitemid 44396584)
- (2006) Applied Physics Letters , vol.89 , Issue.11 , pp. 112113
- Lu, J.G.¹ Zhang, Y.Z.² Ye, Z.Z.³ Zeng, Y.J.⁴ He, H.P.⁵ Zhu, L.P.⁶ Huang, J.Y.⁷ Wang, L.⁸ Yuan, J.⁹ Zhao, B.H.¹⁰ Li, X.H.¹¹

24
- 49649105149
- 0038-1098, 10.1016/j.ssc.2008.07.028
- S. S. Lin, J. G. Lu, Z. Z. Ye, H. P. He, X. Q. Gu, L. X. Chen, J. Y. Huang, and B. H. Zhao, Solid State Commun. 0038-1098 148, 25 (2008). 10.1016/j.ssc.2008.07.028
- (2008) Solid State Commun. , vol.148 , pp. 25
- Lin, S.S.¹ Lu, J.G.² Ye, Z.Z.³ He, H.P.⁴ Gu, X.Q.⁵ Chen, L.X.⁶ Huang, J.Y.⁷ Zhao, B.H.⁸

25
- 0345873483
- 0921-4526, 10.1016/j.physb.2003.09.015
- E. Rita, U. Wahl, A. M. L. Lopes, J. P. Araújo, J. G. Correia, E. Alves, and J. C. Soares, Physica B 0921-4526 340-342, 240 (2003). 10.1016/j.physb.2003.09.015
- (2003) Physica B , vol.340-342 , pp. 240
- Rita, E.¹ Wahl, U.² Lopes, A.M.L.³ Araújo, J.P.⁴ Correia, J.G.⁵ Alves, E.⁶ Soares, J.C.⁷

26
- 33751111681
- Synthesis and analysis of Ag-doped ZnO
- DOI 10.1063/1.2364041
- B. D. Ahn, H. S. Kang, J. H. Kim, G. H. Kim, H. W. Chang, and S. Y. Lee, J. Appl. Phys. 0021-8979 100, 093701 (2006). 10.1063/1.2364041 (Pubitemid 44772576)
- (2006) Journal of Applied Physics , vol.100 , Issue.9 , pp. 093701
- Ahn, B.D.¹ Kang, H.S.² Kim, J.H.³ Kim, G.H.⁴ Chang, H.W.⁵ Lee, S.Y.⁶

27
- 33745020877
- Enhancement of ultraviolet emissions from ZnO films by Ag doping
- DOI 10.1063/1.2211053
- L. Duan, B. Lin, W. Zhang, S. Zhong, and Z. Fu, Appl. Phys. Lett. 0003-6951 88, 232110 (2006). 10.1063/1.2211053 (Pubitemid 43877734)
- (2006) Applied Physics Letters , vol.88 , Issue.23 , pp. 232110
- Duan, L.¹ Lin, B.² Zhang, W.³ Zhong, S.⁴ Fu, Z.⁵

28
- 0000400999
- 0556-2805, 10.1103/PhysRevB.28.946
- A. Kobayashi, O. F. Sankey, and J. D. Dow, Phys. Rev. B 0556-2805 28, 946 (1983). 10.1103/PhysRevB.28.946
- (1983) Phys. Rev. B , vol.28 , pp. 946
- Kobayashi, A.¹ Sankey, O.F.² Dow, J.D.³

29
- 84892264893
- (Springer, Berlin).
- C. F. Klingshirn, Semiconductor Optics (Springer, Berlin, 1995).
- (1995) Semiconductor Optics
- Klingshirn, C.F.¹

30
- 46049104283
- 0370-1972, 10.1002/pssb.200743334
- Y. Yan and S. H. Wei, Phys. Status Solidi B 0370-1972 245, 641 (2008). 10.1002/pssb.200743334
- (2008) Phys. Status Solidi B , vol.245 , pp. 641
- Yan, Y.¹ Wei, S.H.²

31
- 74149087186
- 0169-4332, 10.1016/j.apsusc.2009.10.054
- Z. Yan, Y. Ma, P. Deng, Z. Yu, C. Liu, and Z. Song, Appl. Surf. Sci. 0169-4332 256, 2289 (2010). 10.1016/j.apsusc.2009.10.054
- (2010) Appl. Surf. Sci. , vol.256 , pp. 2289
- Yan, Z.¹ Ma, Y.² Deng, P.³ Yu, Z.⁴ Liu, C.⁵ Song, Z.⁶

32
- 59749103951
- 0947-8396, 10.1007/s00339-008-5028-7
- W. Bin, Z. Yue, M. Jiahua, and S. Wenbin, Appl. Phys. A: Mater. Sci. Process. 0947-8396 94, 715 (2009). 10.1007/s00339-008-5028-7
- (2009) Appl. Phys. A: Mater. Sci. Process. , vol.94 , pp. 715
- Bin, W.¹ Yue, Z.² Jiahua, M.³ Wenbin, S.⁴

33
- 0003412161
- (Pergamon, New York).
- J. F. Ziegler, J. P. Biersack, and U. Littmark, The Stopping and Range of Ions in Matter (Pergamon, New York, 1985).
- (1985) The Stopping and Range of Ions in Matter
- Ziegler, J.F.¹ Biersack, J.P.² Littmark, U.³

34
- 0031547864
- 0168-583X, 10.1016/S0168-583X(96)00963-9
- J. M. Glasko, R. G. Elliman, J. D. F. Gerald, and P. Kringhoj, Nucl. Instrum. Methods Phys. Res. B 0168-583X 127-128, 397 (1997). 10.1016/S0168-583X(96)00963-9
- (1997) Nucl. Instrum. Methods Phys. Res. B , vol.127-128 , pp. 397
- Glasko, J.M.¹ Elliman, R.G.² Gerald, J.D.F.³ Kringhoj, P.⁴

35
- 11044231783
- 2 mixtures for use in ZnO:N synthesis by chemical vapor deposition
- DOI 10.1063/1.1804614, 9
- T. M. Barnes, J. Leaf, S. Hand, C. Fry, and C. A. Wolden, J. Appl. Phys. 0021-8979 96, 7036 (2004). 10.1063/1.1804614 (Pubitemid 40044384)
- (2004) Journal of Applied Physics , vol.96 , Issue.12 , pp. 7036-7044
- Barnes, T.M.¹ Leaf, J.² Hand, S.³ Fry, C.⁴ Wolden, C.A.⁵

36
- 38949121933
- 0038-1098, 10.1016/j.ssc.2007.12.013
- L. Duan, W. Gao R. Chen, and Z. Fu, Solid State Commun. 0038-1098 145, 479 (2008). 10.1016/j.ssc.2007.12.013
- (2008) Solid State Commun. , vol.145 , pp. 479
- Duan, L.¹ Gao, W.² Chen, R.³ Fu, Z.⁴

37
- 70349100825
- 0957-4484, 10.1088/0957-4484/20/39/395704
- J. H. Lee, C. Y. Chou, Z. Bi, C. F. Tsai, and H. Wang, Nanotechnology 0957-4484 20, 395704 (2009). 10.1088/0957-4484/20/39/395704
- (2009) Nanotechnology , vol.20 , pp. 395704
- Lee, J.H.¹ Chou, C.Y.² Bi, Z.³ Tsai, C.F.⁴ Wang, H.⁵

38
- 34547675871
- Effects of oxygen pressures on pulsed laser deposition of ZnO films
- DOI 10.1016/j.physe.2007.05.028, PII S1386947707001099
- Z. G. Zhang, F. Zhou, X. Q. Wei, M. Liu, G. Sun, C. S. Chen, C. S. Xue, H. Z. Zhuang, and B. Y. Man, Physica E (Amsterdam) 1386-9477 39, 253 (2007). 10.1016/j.physe.2007.05.028 (Pubitemid 47223808)
- (2007) Physica E: Low-Dimensional Systems and Nanostructures , vol.39 , Issue.2 , pp. 253-257
- Zhang, Z.G.¹ Zhou, F.² Wei, X.Q.³ Liu, M.⁴ Sun, G.⁵ Chen, C.S.⁶ Xue, C.S.⁷ Zhuang, H.Z.⁸ Man, B.Y.⁹

39
- 25144462707
- A comprehensive review of ZnO materials and devices
- DOI 10.1063/1.1992666, 041301
- Ü. Özgür, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doǧan, V. Avrutin, S. J. Cho, and H. Morko̧, J. Appl. Phys. 0021-8979 98, 041301 (2005). 10.1063/1.1992666 (Pubitemid 41348664)
- (2005) Journal of Applied Physics , vol.98 , Issue.4 , pp. 1-103
- Ozgur, U.¹ Alivov, Ya.I.² Liu, C.³ Teke, A.⁴ Reshchikov, M.A.⁵ Dogan, S.⁶ Avrutin, V.⁷ Cho, S.-J.⁸ Morko, H.⁹

40
- 0000900190
- 0003-6951, 10.1063/1.125503
- S. Choopun, R. D. Vispute, W. Noch, A. Balsamo, R. P. Sharma, T. Venkatesan, A. Iliadis, and D. C. Look, Appl. Phys. Lett. 0003-6951 75, 3947 (1999). 10.1063/1.125503
- (1999) Appl. Phys. Lett. , vol.75 , pp. 3947
- Choopun, S.¹ Vispute, R.D.² Noch, W.³ Balsamo, A.⁴ Sharma, R.P.⁵ Venkatesan, T.⁶ Iliadis, A.⁷ Look, D.C.⁸

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