The effect of ion irradiation on the thermal stability of GeSi/Si strained-layer heterostructures

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 127-128, Issue , 1997, Pages 397-400

  Glasko, John M ^a   Elliman, Robert G ^a   Fitz Gerald, John D ^a   Kringhøj, Per ^b  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b AARHUS UNIVERSITY   (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATION LOOPS; DOUBLE CRYSTAL X RAY DIFFRACTION (DCXRD) ANALYSIS; INTERMEDIATE DEFECT COMPLEXES; STRAIN RELAXATION;

ANNEALING; CRYSTAL LATTICES; DISLOCATIONS (CRYSTALS); ION BOMBARDMENT; NUCLEATION; RADIATION EFFECTS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON; STRAIN; THERMODYNAMIC STABILITY; X RAY CRYSTALLOGRAPHY;

HETEROJUNCTIONS;

EID: 0031547864     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(96)00963-9     Document Type: Article

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