Radiation damage formation and annealing in GaN and ZnO

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7940, Issue , 2011, Pages

  Lorenz, K ^a,b   Peres, M ^c   Franco, N ^a,b   Marques, J G ^a,b   Miranda, S M C ^a   Magalhaes S ^a,c   Monteiro, T ^c   Wesch, W ^d   Alves, E ^a,b   Wendler, E ^d  

^a INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

^b CENTRO DE FÍSICA NUCLEAR DA UNIVERSIDADE DE LISBOA   (Portugal)

^c UNIVERSITY OF AVEIRO   (Portugal)

^d FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

Author keywords

GaN; ion implantation; neutron irradiation; Photoluminescence; Rutherford Backscattering Spectrometry; X ray diffraction; ZnO

Indexed keywords

AMORPHISATION; AMORPHOUS STRUCTURES; BAND GAPS; BEFORE AND AFTER; DAMAGE ACCUMULATION; DAMAGE LEVEL; DEFECT BANDS; DYNAMIC ANNEALING; FLUENCES; GAN; IRRADIATED SAMPLES; LATTICE PARAMETERS; LOW TEMPERATURES; MAIN EFFECT; NEAR BAND EDGE EMISSIONS; RUTHERFORD BACK-SCATTERING SPECTROMETRY; SATURATION REGIME; SINGLE-CRYSTALLINE; ZNO;

AMORPHIZATION; ANNEALING; BACKSCATTERING; DEFECT DENSITY; DEFECTS; DIFFRACTION; GALLIUM NITRIDE; ION IMPLANTATION; LATTICE CONSTANTS; NEUTRONS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; RADIATION; RADIATION DAMAGE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SPECTROMETRY; X RAY DIFFRACTION; ZINC OXIDE;

NEUTRON IRRADIATION;

EID: 79955075382     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.879402     Document Type: Conference Paper

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