-
1
-
-
10044227343
-
Tutorial on Magnetic Tunnel Junction Magnetoresistive Random-Access Memory
-
B. F. Cockburn, "Tutorial on Magnetic Tunnel Junction Magnetoresistive Random-Access Memory," in 12th IEEE International Workshop on Memory Technology, pp. 46-51, 2004.
-
(2004)
12th IEEE International Workshop on Memory Technology
, pp. 46-51
-
-
Cockburn, B.F.1
-
2
-
-
70349985103
-
Simulation of magnetic tunnel junction in ferromagnetic/insulator/ semiconductor structure
-
A.I. Kostrov, V.R. Stempitski, V.N. Kazimirchik, "Simulation of magnetic tunnel junction in ferromagnetic/insulator/semiconductor structure," in Proceedings of the SPIE, vol. 7377, pp.73770P-13, 2009.
-
(2009)
Proceedings of the SPIE
, vol.7377
-
-
Kostrov, A.I.1
Stempitski, V.R.2
Kazimirchik, V.N.3
-
3
-
-
54549095819
-
New non-volatile logic based on Spin-MTJ
-
W. Zhao, E. Belhaire, C. Chappert, F. Jacquet, and P. Mazoyer, "New non-volatile logic based on Spin-MTJ," Phys. Status Solidi, vol. 205, is. 6, pp. 1373-1377, 2008.
-
(2008)
Phys. Status Solidi
, vol.205
, Issue.6
, pp. 1373-1377
-
-
Zhao, W.1
Belhaire, E.2
Chappert, C.3
Jacquet, F.4
Mazoyer, P.5
-
4
-
-
33646727137
-
Diode/magnetic tunnel junction cell for fully scalable matrix-based biochip
-
08B307 doi:10.1063/1.2165148
-
F. A. Cardoso, H. A. Ferreira, J. P. Conde, V. Chu, P. P. Freitas, D. Vidal, J. Germano, L. Sousa, M. S. Piedade, B. A. Costa, and J. M. Lemos, "Diode/magnetic tunnel junction cell for fully scalable matrix-based biochip," J. Appl. Phys., 08B307 (2006); doi:10.1063/1.2165148 (3 pages)
-
(2006)
J. Appl. Phys.
-
-
Cardoso, F.A.1
Ferreira, H.A.2
Conde, J.P.3
Chu, V.4
Freitas, P.P.5
Vidal, D.6
Germano, J.7
Sousa, L.8
Piedade, M.S.9
Costa, B.A.10
Lemos, J.M.11
-
5
-
-
70349986253
-
Spin-dependent transport of electrons through ferromagnetic/insulator/ semiconductor nanostructures
-
T.N. Sidorova, A.L. Danilyuk., V.E. Borisenko, F.A. d'Avitaya, J.-L Lazzari. "Spin-dependent transport of electrons through ferromagnetic/insulator/semiconductor nanostructures," in Proceedings of the SPIE, vol. 7377, pp. 737708-6, 2009.
-
(2009)
Proceedings of the SPIE
, vol.7377
, pp. 737708-737716
-
-
Sidorova, T.N.1
Danilyuk, A.L.2
Borisenko, V.E.3
D'Avitaya, F.A.4
Lazzari, J.-L.5
-
6
-
-
0033183875
-
A Generalized HSPICE Macro-model for Pinned Spin-dependent-tunneling Devices
-
B. Das, W.C Black, "A Generalized HSPICE Macro-model for Pinned Spin-dependent-tunneling Devices," IEEE Trans. Magn., vol. 35, No. 5, pp. 2889-2891, 1999.
-
(1999)
IEEE Trans. Magn.
, vol.35
, Issue.5
, pp. 2889-2891
-
-
Das, B.1
Black, W.C.2
-
7
-
-
21344451135
-
Advanced HSPICE macromodel for magnetic tunnel junction
-
S. Lee, H. Shin, and D. Kim, "Advanced HSPICE macromodel for magnetic tunnel junction," Jpn J Appl Phys, 44 (4B) (2005), pp. 2696-2700.
-
(2005)
Jpn J Appl Phys
, vol.44
, Issue.4 B
, pp. 2696-2700
-
-
Lee, S.1
Shin, H.2
Kim, D.3
-
8
-
-
77955132271
-
-
The SPICE Home Page
-
The SPICE Home Page: http://bwrc.eecs.berkeley.edu/Classes/icbook/SPICE/
-
-
-
-
9
-
-
33646876641
-
The magnetoresistance ratio of an MTJ device and the influence of ramping dc bias voltage rate measured by conductive atomic force microscope
-
Mar.
-
M.-F. Shu, A. C. Cabrera, C.-C. Hsu, C. C. Chen, J. C. Wu, C.-C. Yang, and T.-H. Wu, "The magnetoresistance ratio of an MTJ device and the influence of ramping dc bias voltage rate measured by conductive atomic force microscope," J. Magn. Magn. Mater., vol. 304, pp. 294-296, Mar. 2006.
-
(2006)
J. Magn. Magn. Mater.
, vol.304
, pp. 294-296
-
-
Shu, M.-F.1
Cabrera, A.C.2
Hsu, C.-C.3
Chen, C.C.4
Wu, J.C.5
Yang, C.-C.6
Wu, T.-H.7
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