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Applied Physics Letters

Volumn 96, Issue 10, 2010, Pages

Correlating structural and resistive changes in Ti:NiO resistive memory elements

(7) Heinonen, O a Siegert, M a Roelofs, A a Petford Long, A K b Holt, M b D'Aquila, K b,c Li, W b

a SEAGATE TECHNOLOGY (United States)

b ARGONNE NATIONAL LABORATORY (United States)

c Northwestern University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE GRAINS; GRAIN SIZE; HARD X RAY; IONIC SPECIES; MEMORY ELEMENT; RESISTIVE RANDOM ACCESS MEMORY; STRUCTURAL CHANGE;

ELECTROCHEMISTRY; ELECTROMETALLURGY; RANDOM ACCESS STORAGE;

ELECTROFORMING;

EID: 77949694257 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3355546 Document Type: Article

Times cited : (17)

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