Characteristics of SnO 2 thin films prepared by SILAR

Solid State Sciences

Volumn 14, Issue 9, 2012, Pages 1282-1288

  Yldrm, M Ali ^a   Akaltun, Yunus ^a   Ate, Aytun ^b  

^a ERZINCAN UNIVERSITY   (Turkey)

^b Yldrm Beyazt University   (Turkey)

Author keywords

Dielectric constant; Film thickness; Refractive index; SILAR; SnO 2

Indexed keywords

CHARACTERISTIC PARAMETER; ELECTRICAL CONDUCTIVITY; GLASS SUBSTRATES; HIGH-FREQUENCY DIELECTRICS; OPTICAL AND ELECTRICAL PROPERTIES; OPTICAL BANDS; OXYGEN ATMOSPHERE; POLYCRYSTALLINE; ROOM TEMPERATURE; SILAR; SNO 2; SUCCESSIVE IONIC LAYER ADSORPTION AND REACTIONS; TETRAGONAL STRUCTURE; THICKNESS EFFECT;

ADSORPTION; ELECTRIC CONDUCTIVITY; OPTICAL BAND GAPS; PERMITTIVITY; REFRACTIVE INDEX; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; SURFACE PROPERTIES; THIN FILMS; X RAY DIFFRACTION;

FILM THICKNESS;

EID: 84865462658     PISSN: 12932558     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solidstatesciences.2012.07.012     Document Type: Article

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