Ultraviolet excitation of photoconductivity in thin films of sol-gel SnO2

Journal of the European Ceramic Society

Volumn 25, Issue 12 SPEC. ISS., 2005, Pages 2825-2828

  Geraldo, V ^a,b   Scalvi, L V A ^a   Morais, E A ^a   Santilli, C V ^a   Miranda, P B ^b   Pereira, T J ^a  

^a SÃO PAULO STATE UNIVERSITY UNESP   (Brazil)

^b UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

Electrical conductivity; Sensors; Sol gel processes; Tin dioxide

Indexed keywords

DEUTERIUM; GRAIN BOUNDARIES; PHOTOCONDUCTIVITY; PHOTOCURRENTS; PHOTONS; SOL-GELS; ULTRAVIOLET RADIATION;

BANDGAP TRANSITION; PHOTOCURRENT SPECTRA; TEMPERATURE DEPENDENCE; ULTRAVIOLET EXCITATION;

THIN FILMS;

SOL-GEL PROCESS;

EID: 20444449702     PISSN: 09552219     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jeurceramsoc.2005.03.149     Document Type: Article

References (12)

1. S.C. Ray M.K. Karanjai and D. Dasgupta Tin dioxide based transparent semiconducting films deposited by the dip-coating technique. Surf. Coat. Technol. 102 1998 73-80
2. 2-based thin films deposited by pyrosol from tin precursors. J. Eur. Ceram. Soc. 19 1999 787-789
3. C. Terrier J.P. Chatelon and J.A. Roger Electrical and optical properties of Sb:SnO2 thin films obtained by the sol-gel method. Thin Solid Films 295 1997 95-100
4. M. Guglielmi E. Menegazzo M. Pao0lizzi G. Gasparro D. Ganz J. Putz et al. Sol-gel deposited Sb-doped tin oxide films. J. Sol-Gel Sci. Technol. 13 1998 679-683
5. S. Nakata and N. Ojima Detection of a sample gas in the presence of an interferant gas based on a nonlinear response. Sens. Actuators B56 1999 79-84
6. 2) films. Phyical. Rev. B 44 1991 5672-5680
7. J. Watson K. Ihokura and G.S.V. Coles The tin dioxide gas sensor. Meas. Sci. Technol. 4 1993 711-719
8. Powder Diffraction File, Inorganic, Vol 21, JCPDS, Swathmore, 1983.
9. 2 coatings prepared by sol-gel. J. Non-cryst. Solids 247 1999 171-175
10. 2 thin films. J. Eur. Ceram. Soc. 24 2004 1857-1860
11. P.M. Mooney Deep donor levels (DX centers) in III-V semiconductors. J. Appl. Phys. 67 1990 R1-R26
12. 1-xAs by transient photoconductivity. Solid State Commun. 104 1997 781-785