-
1
-
-
9744248669
-
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
-
DOI 10.1038/nature03090
-
K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, Nature (London), 432, 25 (2004). 10.1038/nature03090 (Pubitemid 39585210)
-
(2004)
Nature
, vol.432
, Issue.7016
, pp. 488-492
-
-
Nomura, K.1
Ohta, H.2
Takagi, A.3
Kamiya, T.4
Hirano, M.5
Hosono, H.6
-
2
-
-
43049114999
-
-
10.1016/j.jnoncrysol.2007.10.071
-
H. Hosono, K. Nomura, Y. Ogo, T. Uruga, and T. Kamiya, J. Non-Cryst. Solids, 354, 2796 (2008). 10.1016/j.jnoncrysol.2007.10.071
-
(2008)
J. Non-Cryst. Solids
, vol.354
, pp. 2796
-
-
Hosono, H.1
Nomura, K.2
Ogo, Y.3
Uruga, T.4
Kamiya, T.5
-
3
-
-
33846965196
-
-
10.1063/1.2458457
-
P. Gorrn, P. Holzer, T. Riedl, W. Kowalsky, J. Wang, T. Weimann, P. Hinze, and S. Kipp, Appl. Phys. Lett., 90, 063502 (2007). 10.1063/1.2458457
-
(2007)
Appl. Phys. Lett.
, vol.90
, pp. 063502
-
-
Gorrn, P.1
Holzer, P.2
Riedl, T.3
Kowalsky, W.4
Wang, J.5
Weimann, T.6
Hinze, P.7
Kipp, S.8
-
4
-
-
78149382528
-
-
10.1088/1468-6996/11/4/044305
-
T. Kamiya, K. Nomura, and H. Hosono, Sci. Technol. Adv. Mater., 11, 044305 (2010). 10.1088/1468-6996/11/4/044305
-
(2010)
Sci. Technol. Adv. Mater.
, vol.11
, pp. 044305
-
-
Kamiya, T.1
Nomura, K.2
Hosono, H.3
-
5
-
-
77951531173
-
-
10.1063/1.3387819
-
E. Chong, K. C. Jo, and S. Y. Lee, Appl. Phys. Lett., 96, 152102 (2010). 10.1063/1.3387819
-
(2010)
Appl. Phys. Lett.
, vol.96
, pp. 152102
-
-
Chong, E.1
Jo, K.C.2
Lee, S.Y.3
-
6
-
-
34547365696
-
Improvements in the device characteristics of amorphous indium gallium zinc oxide thin-film transistors by Ar plasma treatment
-
DOI 10.1063/1.2753107
-
J. Park, J. K. Jeong, Y. Mo, H. D. Kim, and S. Kim, Appl. Phys. Lett., 90, 262106 (2007). 10.1063/1.2753107 (Pubitemid 47141109)
-
(2007)
Applied Physics Letters
, vol.90
, Issue.26
, pp. 262106
-
-
Park, J.-S.1
Jeong, J.K.2
Mo, Y.-G.3
Kim, H.D.4
Kim, S.-I.5
-
7
-
-
75749140059
-
-
10.1109/LED.2009.2036944
-
S. Yang, D. Cho, M. K. Ryu, S. K. Park, C. Hwang, J. Jang, and J. K. Jeong, IEEE Electron Device Lett., 31, 144 (2010). 10.1109/LED.2009.2036944
-
(2010)
IEEE Electron Device Lett.
, vol.31
, pp. 144
-
-
Yang, S.1
Cho, D.2
Ryu, M.K.3
Park, S.K.4
Hwang, C.5
Jang, J.6
Jeong, J.K.7
-
8
-
-
34548684568
-
High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel
-
DOI 10.1063/1.2783961
-
J. K. Jeong, J. H. Jeong, H. W. Yang, J. Park, Y. Mo, and H. D. Kim, Appl. Phys. Lett., 91, 113505 (2007). 10.1063/1.2783961 (Pubitemid 47416041)
-
(2007)
Applied Physics Letters
, vol.91
, Issue.11
, pp. 113505
-
-
Jeong, J.K.1
Jeong, J.H.2
Yang, H.W.3
Park, J.-S.4
Mo, Y.-G.5
Kim, H.D.6
-
9
-
-
60349091512
-
-
10.1002/adma.200801470
-
S. K. Park, C. Hwang, M. Ryu, S. Yang, C. Byun, J. Shin, J. Lee, K. Lee, M. S. Oh, and S. Im, Adv. Mater., 21, 678 (2009). 10.1002/adma.200801470
-
(2009)
Adv. Mater.
, vol.21
, pp. 678
-
-
Park, S.K.1
Hwang, C.2
Ryu, M.3
Yang, S.4
Byun, C.5
Shin, J.6
Lee, J.7
Lee, K.8
Oh, M.S.9
Im, S.10
-
10
-
-
79953906760
-
-
10.1063/1.3571448
-
B. S. Yang, M. S. Huh, S. Oh, U. S. Lee, Y. J. Kim, M. S. Oh, J. K. Jeong, C. S. Hwang, and H. J. Kim, Appl. Phys. Lett., 98, 122110 (2011). 10.1063/1.3571448
-
(2011)
Appl. Phys. Lett.
, vol.98
, pp. 122110
-
-
Yang, B.S.1
Huh, M.S.2
Oh, S.3
Lee, U.S.4
Kim, Y.J.5
Oh, M.S.6
Jeong, J.K.7
Hwang, C.S.8
Kim, H.J.9
-
11
-
-
79953787561
-
-
10.1149/1.3567027
-
Y. J. Chung, J. H. Kim, U. K. Kim, D.-Y. Cho, H. S. Jung, J. K. Jeong, and C. S. Hwang, Electrochem Solid-State Lett., 14, G35 (2011). 10.1149/1.3567027
-
(2011)
Electrochem Solid-State Lett.
, vol.14
, pp. 35
-
-
Chung, Y.J.1
Kim, J.H.2
Kim, U.K.3
Cho, D.-Y.4
Jung, H.S.5
Jeong, J.K.6
Hwang, C.S.7
-
12
-
-
0004005306
-
-
3rd ed., p, Wiley Interscience, New Jersey.
-
S. M. Sze and Kwok. K. Ng, Physics of Semiconductor Devices, 3rd ed., p 315, Wiley Interscience, New Jersey (2007).
-
(2007)
Physics of Semiconductor Devices
, pp. 315
-
-
Sze, S.M.1
Kwok2
Ng, K.3
-
14
-
-
77955160907
-
-
10.1063/1.3464964
-
B. Ryu, H.-K. Noh, E.-A. Choi, and K. J. Chang, Appl. Phys. Lett., 97, 022108 (2010). 10.1063/1.3464964
-
(2010)
Appl. Phys. Lett.
, vol.97
, pp. 022108
-
-
Ryu, B.1
Noh, H.-K.2
Choi, E.-A.3
Chang, K.J.4
-
15
-
-
0010059052
-
-
10.1103/PhysRevB.63.075205
-
S. B. Zhang, S.-H. Wei, and A. Zunger, Phys. Rev. B., 63, 075205 (2001). 10.1103/PhysRevB.63.075205
-
(2001)
Phys. Rev. B.
, vol.63
, pp. 075205
-
-
Zhang, S.B.1
Wei, S.-H.2
Zunger, A.3
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