-
1
-
-
55149104462
-
-
J. K. Jeong, J. H. Jeong, J. H. Choi, J. S. Im, S. H. Kim, H. W. Yang, K.N. Kang, K. S. Kim, T. K. Ahn, H. J. Chung, M. K. Kim, B. S. Gu, J. S. Park, Y. G. Mo, H. D. Kim and H. K. Chung, SID Int. Symp. Digest Tech. Papers, 39, 1 (2008) [http://dx.doi. org/10.1889/1.3069591].
-
(2008)
SID Int. Symp. Digest Tech. Papers
, vol.39
, pp. 1
-
-
Jeong, J.K.1
Jeong, J.H.2
Choi, J.H.3
Im, J.S.4
Kim, S.H.5
Yang, H.W.6
Kang, K.N.7
Kim, K.S.8
Ahn, T.K.9
Chung, H.J.10
Kim, M.K.11
Gu, B.S.12
Park, J.S.13
Mo, Y.G.14
Kim, H.D.15
Chung, H.K.16
-
2
-
-
54549120323
-
-
J. H. Lee, D. H. Kim, D. J. Yang, S. Y. Hong, K. S. Yoon, P. S. Hong, C. O. Jeong, H. S. Park, S. Y. Kim, S. K. Lim, S. S. Kim, K. S. Son, T. S. Kim, J. Y. Kwon and S. Y. Lee, SID Int. Symp. Digest Tech. Papers, 39, 625 (2008) [http://dx.doi.org/10.1889/1.3069740].
-
(2008)
SID Int. Symp. Digest Tech. Papers
, vol.39
, pp. 625
-
-
Lee, J.H.1
Kim, D.H.2
Yang, D.J.3
Hong, S.Y.4
Yoon, K.S.5
Hong, P.S.6
Jeong, C.O.7
Park, H.S.8
Kim, S.Y.9
Lim, S.K.10
Kim, S.S.11
Son, K.S.12
Kim, T.S.13
Kwon, J.Y.14
Lee, S.Y.15
-
3
-
-
51349141239
-
-
J. M. Lee, I. T. Cho, J. H. Lee and H. I. Kwon, Appl. Phys. Lett., 93, 093504 (2008) [http://dx.doi.org/10.1063/1.2977865].
-
(2008)
Appl. Phys. Lett.
, vol.93
, pp. 093504
-
-
Lee, J.M.1
Cho, I.T.2
Lee, J.H.3
Kwon, H.I.4
-
5
-
-
77957234556
-
-
J. Triska, J. F. Conley, R. Presley and J. F. Wager, J. Vac. Sci. Technol. B, 28, C5I1 (2010) [http://dx.doi.org/10.1116/1.3455494].
-
(2010)
J. Vac. Sci. Technol. B
, vol.28
-
-
Triska, J.1
Conley, J.F.2
Presley, R.3
Wager, J.F.4
-
6
-
-
67650492747
-
-
Y. K. Moon, Sih Lee, W. S. Kim, B. W. Kang, C. O. Jeong, D. H. Lee and J. W. Park, Appl. Phys. Lett., 95, 013507 (2009) [http:// dx.doi.org/10.1063/1.3167816].
-
(2009)
Appl. Phys. Lett.
, vol.95
, pp. 013507
-
-
Moon, Y.K.1
Lee, S.2
Kim, W.S.3
Kang, B.W.4
Jeong, C.O.5
Lee, D.H.6
Park, J.W.7
-
7
-
-
70349668804
-
-
J. S. Lee, J. S. Park, Y. S. Pyo, D. B. Lee, E. H. Kim, D. Stryakhilev, T. W. Kim, D. U. Jin and Y. G. Mo, Appl. Phys. Lett., 95, 123502 (2009) [http://dx.doi.org/10.1063/1.3232179].
-
(2009)
Appl. Phys. Lett.
, vol.95
, pp. 123502
-
-
Lee, J.S.1
Park, J.S.2
Pyo, Y.S.3
Lee, D.B.4
Kim, E.H.5
Stryakhilev, D.6
Kim, T.W.7
Jin, D.U.8
Mo, Y.G.9
-
8
-
-
39149123183
-
-
J. H. Lee, S. G. Park, S. M. Han, M. K. Han, K. C. Park, Solid-State Electronics, 52, 462 (2008) [http://dx.doi.org/10.1016/ j.sse.2007.10.030].
-
(2008)
Solid-State Electronics
, vol.52
, pp. 462
-
-
Lee, J.H.1
Park, S.G.2
Han, S.M.3
Han, M.K.4
Park, K.C.5
-
9
-
-
79951917293
-
-
S. Y. Huang, T. C. Chang, M. C. Chen, and W. L. Liau, Electrochemical and Solid-State Letters, 14, H177 (2011) [http:// dx.doi.org/10.1149/1.3534828].
-
(2011)
Electrochemical and Solid-State Letters
, vol.14
-
-
Huang, S.Y.1
Chang, T.C.2
Chen, M.C.3
Liau, W.L.4
-
10
-
-
77953765579
-
-
C. T. Tsai, T. C. Chang, S. C. Chen, Ikai Lo, S. W. Tsao, M. C. Hung, J. J. Chang, C. Y. Wu and C. Y. Huang, Appl. Phys. Lett., 96, 242105 (2010) [http://dx.doi.org/10.1063/1.3453870].
-
(2010)
Appl. Phys. Lett.
, vol.96
, pp. 242105
-
-
Tsai, C.T.1
Chang, T.C.2
Chen, S.C.3
Lo, I.4
Tsao, S.W.5
Hung, M.C.6
Chang, J.J.7
Wu, C.Y.8
Huang, C.Y.9
-
12
-
-
57049096959
-
-
C. F. Huang, C. Y. Peng, Y. J. Yang, H. C. Sun, H. C. Chang, P. S. Kuo, H. L. Chang, C. Z. Liu and C. W. Liu, IEEE Electron Device Letters, 29, 1332 (2008) [http://dx.doi.org/10.1109/ LED.2008.2007306].
-
(2008)
IEEE Electron Device Letters
, vol.29
, pp. 1332
-
-
Huang, C.F.1
Peng, C.Y.2
Yang, Y.J.3
Sun, H.C.4
Chang, H.C.5
Kuo, P.S.6
Chang, H.L.7
Liu, C.Z.8
Liu, C.W.9
-
13
-
-
0043215612
-
-
P. Kofstad, J. Phys. chem. Solids, 23, 1571 (1962) [http://dx.doi. org/10.1016/0022-3697(62)90239-1].
-
(1962)
J. Phys. chem. Solids
, vol.23
, pp. 1571
-
-
Kofstad, P.1
-
14
-
-
0022796712
-
-
P. Bonasewicz, W. Hirschwald, and G. Neumann, Phys. Status solidi A, 97, 593 (1986) [http://dx.doi.org/ 10.1002/ pssa.2210970234].
-
(1986)
Phys. Status solidi A
, vol.97
, pp. 593
-
-
Bonasewicz, P.1
Hirschwald, W.2
Neumann, G.3
-
15
-
-
0028760682
-
-
V. Gavryushin, G. Raciukaitis, D. Juodzbalis, A. Kazlauskas, and V. Kubertavicius, J. Cryst. Growth, 138, 924 (1994) [http://dx.doi. org/10.1016/0022-0248(94)90933-4].
-
(1994)
J. Cryst. Growth
, vol.138
, pp. 924
-
-
Gavryushin, V.1
Raciukaitis, G.2
Juodzbalis, D.3
Kazlauskas, A.4
Kubertavicius, V.5
-
17
-
-
0025465178
-
-
T. K. Gupta, J. Am. Ceram. Soc., 73, 1817 (1990) [http://dx.doi. org/10.1111/j.1151-2916.1990.tb05232.x].
-
(1990)
J. Am. Ceram. Soc.
, vol.73
, pp. 1817
-
-
Gupta, T.K.1
-
18
-
-
0019576738
-
-
T. K. Gupta, W. G. Carlson, P. L. Hower, J. Appl. Phys., 52, 4104 (1981) [http://dx.doi.org/10.1063/1.329262].
-
(1981)
J. Appl. Phys.
, vol.52
, pp. 4104
-
-
Gupta, T.K.1
Carlson, W.G.2
Hower, P.L.3
-
19
-
-
47049125245
-
-
S. L. Jiang, T. T. Xie, H. Yu, Y. Q. Huang and H. B. Zhang, Microelectronic Engineering, 85, 371 (2008) [http://dx.doi. org/10.1016/j.mee.2007.07.011].
-
(2008)
Microelectronic Engineering
, vol.85
, pp. 371
-
-
Jiang, S.L.1
Xie, T.T.2
Yu, H.3
Huang, Y.Q.4
Zhang, H.B.5
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