Normally-off AlGaN/GaN-on-Si MOSHFETs with TaN floating gates and ALD SiO2 tunnel dielectrics

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2010, Pages

  Lee, Bongmook ^a   Kirkpatrick, Casey ^a   Yang, Xiangyu ^a   Jayanti, Srikant ^a   Suri, Rahul ^a   Roberts, John ^b   Misra, Veena ^a  

^a North Carolina State University   (United States)

^b NITRONEX CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; CHARGE STORAGE; DIELECTRIC STACK; ENHANCEMENT MODES; FLOATING GATES; GATE LEAKAGES; METAL OXIDE SEMICONDUCTOR; MOS-HFETS; MOSHFET; NEGATIVE CHARGE; TUNNEL DIELECTRICS; TUNNEL OXIDE];

DIELECTRIC MATERIALS; ELECTRON DEVICES; GALLIUM NITRIDE; HETEROJUNCTIONS; SILICON COMPOUNDS; TANNING; TANTALUM COMPOUNDS;

FIELD EFFECT TRANSISTORS;

EID: 79951825712     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2010.5703401     Document Type: Conference Paper

References (5)

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