Field-effect transistors based on silicon nanowire arrays: Effect of the good and the bad silicon nanowires

ACS Applied Materials and Interfaces

Volumn 4, Issue 8, 2012, Pages 4251-4258

  Wang, Bin ^a   Stelzner, Thomas ^b   Dirawi, Rawi ^a   Assad, Ossama ^a   Shehada, Nisreen ^a   Christiansen, Silke ^c   Haick, Hossam ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^b LEIBNIZ INSTITUTE OF PHOTONIC TECHNOLOGY   (Germany)

^c MAX PLANCK INSTITUTE FOR THE SCIENCE OF LIGHT   (Germany)

Author keywords

array; field effect transistor; gold; impurity; scaling; silicon nanowire

Indexed keywords

ALIGNED ARRAYS; ARRAY; BINOMIAL MODELS; CHANNEL NUMBER; COMPLEMENTARY ANALYSIS; DEVICE PERFORMANCE; DOPING DENSITIES; ELECTRICAL CHARACTERISTIC; ELECTRICAL PERFORMANCE; FUNDAMENTAL PARAMETERS; GOLD CATALYSTS; GROWTH PROCESS; MAIN GROUP; SCALING; SILICON NANOWIRE ARRAYS; SILICON NANOWIRES; THRESHOLD NUMBERS; UNIFORM DIAMETER;

CHEMICAL VAPOR DEPOSITION; FIELD EFFECT TRANSISTORS; GOLD; IMPURITIES; NANOWIRES;

SILICON;

EID: 84865257480     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am300961d     Document Type: Article

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