Low-cost, large-scale, and facile production of Si nanowires exhibiting enhanced third-order optical nonlinearity

ACS Applied Materials and Interfaces

Volumn 4, Issue 3, 2012, Pages 1553-1559

  Huang, Zhipeng ^a   Wang, Ruxue ^a   Jia, Ding ^a   Maoying, Li ^a   Humphrey, Mark G ^b   Zhang, Chi ^a  

^a JIANGSU UNIVERSITY   (China)

^b AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

etching; nonlinear optics; silicon nanowire; synthesis

Indexed keywords

AVERAGE DIAMETER; BULK SILICON; FACILE METHOD; FACILE PRODUCTION; LARGE-SCALE PRODUCTION; METAL-ASSISTED CHEMICAL ETCHING; SI NANOWIRE; SILICON NANOCRYSTALS; SILICON NANOWIRES; SILICON POWDERS; SINGLE CRYSTAL SILICON; THIRD ORDER NONLINEAR OPTICAL PROPERTIES; THIRD-ORDER OPTICAL NONLINEARITIES; THIRD-ORDER SUSCEPTIBILITY;

CRYSTAL STRUCTURE; ETCHING; NANOWIRES; NONLINEAR OPTICS; PLATING; POROUS SILICON; SILICON COMPOUNDS; SYNTHESIS (CHEMICAL);

SILICON OXIDES;

EID: 84859143951     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am201758z     Document Type: Article

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