Self-sorted, aligned nanotube networks for thin-film transistors

Science

Volumn 321, Issue 5885, 2008, Pages 101-104

  LeMieux, Melburne C ^a   Roberts, Mark ^a   Barman, Soumendra ^a   Yong, Wan Jin ^b   Jong, Min Kim ^b   Bao, Zhenan ^a  

^a Stanford University   (United States)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMINO ACID; CARBON NANOTUBE; NANOMATERIAL; OXYGEN; SILANE DERIVATIVE; SINGLE WALLED NANOTUBE;

CARBON; CHEMISTRY; ELECTRONIC EQUIPMENT; TOPOLOGY;

ARTICLE; ATOMIC FORCE MICROSCOPY; CHIRALITY; DIELECTRIC CONSTANT; ELECTRIC POTENTIAL; FILM; MEDICAL INSTRUMENTATION; PRIORITY JOURNAL; RAMAN SPECTROMETRY; REPRODUCIBILITY; SEMICONDUCTOR;

EID: 46849085358     PISSN: 00368075     EISSN: 10959203     Source Type: Journal    
DOI: 10.1126/science.1156588     Document Type: Article

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32. This research was partially supported by the NSF-sponsored Center for Polymer Interface and Macromolecular Assemblies (CPIMA), Samsung Advanced Research Institute of Technology, Intel, and Applied Materials. M.C.L. acknowledges support from the Intelligence Community Postdoctoral Fellowship Program. M.R. acknowledges support from the NASA Graduate Student Research Fellowship. Z.B. acknowledges support from the Sloan Research Fellowship and Finmeccanica Faculty Scholar Award. We thank S. Hellstrom, H. W. Lee, J. N. Kurtin (Intel), and B. Chen (NASA Ames) for technical discussions.