Influence of the annealing temperature and silicon concentration on the absorption and emission properties of Si nanocrystals

Journal of Applied Physics

Volumn 102, Issue 4, 2007, Pages

  Podhorodecki, A ^a   Zatryb, G ^a   Misiewicz, J ^a   Wojcik, J ^b   Mascher, P ^b  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b MCMASTER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; CHEMICAL VAPOR DEPOSITION; CONCENTRATION (PROCESS); OPTICAL PROPERTIES; PARTICULATE EMISSIONS; PHOTOLUMINESCENCE;

ABSORPTION EDGE; ANNEALING TEMPERATURE; TRANSMITTANCE MEASUREMENTS;

NANOCRYSTALLINE SILICON;

EID: 34548439413     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2772501     Document Type: Article

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