Light absorption in silicon quantum dots embedded in silica

Journal of Applied Physics

Volumn 106, Issue 10, 2009, Pages

  Mirabella, S ^a   Agosta, R ^a   Franzo G ^a   Crupi, I ^a   Miritello, M ^a   Lo Savio, R ^a   Di Stefano, M A ^b   Di Marco, S ^b   Simone, F ^c   Terrasi, A ^a  

^a UNIVERSITY OF CATANIA   (Italy)

^b STMICROELECTRONICS   (Italy)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION COEFFICIENTS; ABSORPTION PROCESS; AMORPHOUS SI; BULK AMORPHOUS; CRYSTALLINE TRANSITION; ENERGY THRESHOLDS; LOWER DENSITY; MAGNETRON CO-SPUTTERING; MULTILAYER STRUCTURES; OPTICAL ABSORPTION MEASUREMENT; PHOTOLUMINESCENCE ANALYSIS; PHOTON ABSORPTIONS; QUANTUM CONFINEMENT EFFECTS; QUARTZ SUBSTRATE; RUTHERFORD BACK-SCATTERING SPECTROMETRY; SI CONTENT; SI QUANTUM DOT; SI-SI BONDS; SILICON QUANTUM DOTS; SINGLE LAYER; SINGLE-LAYER STRUCTURE;

ABSORPTION; ABSORPTION SPECTROSCOPY; AMORPHOUS MATERIALS; CRYSTALLOGRAPHY; ENERGY GAP; FILMS; LIGHT ABSORPTION; MULTILAYERS; OPTICAL BAND GAPS; OPTICAL MULTILAYERS; OXIDE MINERALS; PHOTONS; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; QUARTZ; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR QUANTUM DOTS; SILICA; SILICON; SILICON COMPOUNDS; SILICON OXIDES; STOICHIOMETRY; SYNTHESIS (CHEMICAL); X RAY PHOTOELECTRON SPECTROSCOPY;

AMORPHOUS SILICON;

EID: 71749113419     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3259430     Document Type: Article

References (47)

1. M. A. Green, Physica E (Amsterdam) 1386-9477 14, 65 (2002). 10.1016/S1386-9477(02)00361-2 (Pubitemid 34661630)
2. A. J. Nozik, Physica E (Amsterdam) 1386-9477 14, 115 (2002). 10.1016/S1386-9477(02)00374-0 (Pubitemid 34661638)
3. G. Conibeer, Mater. Today 1369-7021 10, 42 (2007). 10.1016/S1369-7021(07) 70278-X (Pubitemid 47552907)
4. A. Slaoui and R. T. Collins, MRS Bull. 0883-7694 32, 211 (2007).
5. R. D. Schaller and V. I. Klimov, Phys. Rev. Lett. 0031-9007 92, 186601 (2004). 10.1103/PhysRevLett.92.186601
6. R. D. Schaller, M. Sykora, J. M. Pietryga, and V. I. Klimov, Nano Lett. 1530-6984 6, 424 (2006). 10.1021/nl052276g
7. R. J. Ellingson, M. C. Beard, J. C. Johnson, P. Yu, O. I. Micic, A. J. Nozik, A. Shabaev, and A. L. Efros, Nano Lett. 1530-6984 5, 865 (2005). 10.1021/nl0502672
8. A. Luque and A. Mart, Phys. Rev. Lett. 0031-9007 78, 5014 (1997). 10.1103/PhysRevLett.78.5014
9. A. Mart, E. Antoln, C. R. Stanley, C. D. Farmer, N. Lpez, P. Daz, E. C̀novas, P. G. Linares, and A. Luque, Phys. Rev. Lett. 0031-9007 97, 247701 (2006). 10.1103/PhysRevLett.97.247701 (Pubitemid 44927269)
10. G. Conibeer, M. Green, R. Corkish, Y. Cho, E. -C. Cho, C. -W. Jiang, T. Fangsuwannarak, E. Pink, Y. Huang, T. Puzzer, T. Trupke, B. Richards, A. Shalav, and K. -L. Lin, Thin Solid Films 0040-6090 511-512, 654 (2006). 10.1016/j.tsf.2005.12.119 (Pubitemid 43728924)
11. M. A. Green, G. Conibeer, I. Perez-Wurfl, S. J. Huang, D. König, D. Song, A. Gentle, X. J. Hao, S. W. Park, F. Gao, Y. H. So, and Y. Huang, Proceedings of the 23rd European Photovoltaic Solar Energy Conference, Valencia, Spain, 1-5 September 2008 (unpublished).
12. L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franz, and F. Priolo, Nature (London) 0028-0836 408, 440 (2000). 10.1038/35044012
13. M. V. Wolkin, J. Jorne, P. M. Fauchet, G. Allan, and C. Delerue, Phys. Rev. Lett. 0031-9007 82, 197 (1999). 10.1103/PhysRevLett.82.197
14. S. Tiwari, F. Rana, K. Chan, H. Hanafi, W. Chan, and D. Buchanan, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 1995, 521.
15. I. I. Slowing, C. -W. Wu, J. L. Vivero-Escoto, and V. S.-Y. Lin, Small 1613-6810 5, 57 (2009). 10.1002/smll.200800926
16. S. -W. Lin and D. -H. Chen, Small 1613-6810 5, 72 (2009). 10.1002/smll.200800677
17. F. Priolo, G. Franz, D. Pacifici, V. Vinciguerra, F. Iacona, and A. Irrera, J. Appl. Phys. 0021-8979 89, 264 (2001). 10.1063/1.1331074 (Pubitemid 33703374)
18. M. C. Beard, K. P. Knutsen, P. Yu, J. M. Luther, Q. Song, W. K. Metzger, R. J. Ellingson, and A. J. Nozik, Nano Lett. 1530-6984 7, 2506 (2007). 10.1021/nl071486l (Pubitemid 47310153)
19. D. Timmerman, I. Izeddin, P. Stallinga, I. N. Yassievich, and T. Gregorkiewicz, Nat. Photonics 1749-4885 2, 105 (2008). 10.1038/nphoton.2007.279
20. E. -C. Cho, S. Park, X. Hao, D. Song, G. Conibeer, S. -C. Park, and M. Green, Nanotechnology 0957-4484 19, 245201 (2008). 10.1088/0957-4484/19/24/ 245201 (Pubitemid 351813664)
21. C. -Y. Liu, Z. C. Holman, and U. R. Kortshagen, Nano Lett. 1530-6984 9, 449 (2009). 10.1021/nl8034338
22. S. Prezioso, S. M. Hossain, A. Anopchenko, L. Pavesi, M. Wang, G. Pucker, and P. Bellutti, Appl. Phys. Lett. 0003-6951 94, 062108 (2009). 10.1063/1.3081410
23. T. Inokuma, Y. Wakayama, T. Muramoto, R. Aoki, Y. Kurata, and S. Hasegawa, J. Appl. Phys. 0021-8979 83, 2228 (1998). 10.1063/1.366961
24. G. Vijaya Prakash, N. Daldosso, E. Degoli, F. Iacona, M. Cazzannelli, Z. Gaburro, G. Puker, P. Dalba, F. Rocca, E. Ceretta Moreira, G. Franz, D. Pacifici, F. Priolo, C. Arcangeli, A. B. Filonov, S. Ossicini, and L. Pavesi, J. Nanosci. Nanotechnol. 1533-4880 1, 159 (2001). 10.1166/jnn.2001.024 (Pubitemid 33689656)
25. A. Podhorodecki, G. Zatryb, J. Misiewicz, J. Wojcik, and P. Mascher, J. Appl. Phys. 0021-8979 102, 043104 (2007). 10.1063/1.2772501 (Pubitemid 47352399)
26. Z. Ma, X. Liao, G. Kong, and J. Chu, Appl. Phys. Lett. 0003-6951 75, 1857 (1999). 10.1063/1.124851
27. L. Khriachtchev, M. Räsänen, S. Novikov, and L. Pavesi, Appl. Phys. Lett. 0003-6951 85, 1511 (2004). 10.1063/1.1781733
28. D. Amans, S. Callard, A. Gagnaire, J. Joseph, G. Ledoux, and F. Huisken, J. Appl. Phys. 0021-8979 93, 4173 (2003). 10.1063/1.1538344
29. J. A. Moreno, B. Garrido, P. Pellegrino, C. Garcia, J. Arbiol, J. R. Morante, P. Marie, F. Gourbilleau, and R. Rizk, J. Appl. Phys. 0021-8979 98, 013523 (2005). 10.1063/1.1943512 (Pubitemid 41049036)
30. X. J. Hao, E. -C. Cho, C. Flynn, Y. S. Shen, G. Conibeer, and M. A. Green, Nanotechnology 0957-4484 19, 424019 (2008). 10.1088/0957-4484/19/42/ 424019
31. F. Gourbilleau, C. Ternon, D. Maestre, O. Palais, and C. Dufour, J. Appl. Phys. 0021-8979 106, 013501 (2009). 10.1063/1.3156730
32. M. Zacharias, J. Heitmann, R. Scholz, U. Kahler, M. Schmidt, and J. Blasing, Appl. Phys. Lett. 0003-6951 80, 661 (2002). 10.1063/1.1433906 (Pubitemid 34148265)
33. J. C. Idrobo, A. Halabica, R. H. Magruder III, R. F. Haglund, Jr., S. J. Pennycook, and S. T. Pantelides, Phys. Rev. B 0163-1829 79, 125322 (2009). 10.1103/PhysRevB.79.125322
34. L. A. Nesbit, Appl. Phys. Lett. 0003-6951 46, 38 (1985). 10.1063/1.95842 (Pubitemid 15476828)
35. M. Mayer, " SIMNRA User's Guide.," Report IPP 9/113, Max-Planck-Institut für Plasmaphysik, Garching, Germany, 1997.
36. A. La Magna, G. Nicotra, C. Bongiorno, C. Spinella, M. G. Grimaldi, E. Rimini, L. Caristia, and S. Coffa, Appl. Phys. Lett. 0003-6951 90, 183101 (2007). 10.1063/1.2734398 (Pubitemid 46701197)
37. F. Iacona, G. Franz, and C. Spinella, J. Appl. Phys. 0021-8979 87, 1295 (2000). 10.1063/1.372013
38. F. Iacona, C. Bongiorno, C. Spinella, S. Boninelli, and F. Priolo, J. Appl. Phys. 0021-8979 95, 3723 (2004). 10.1063/1.1664026
39. G. Franz, M. Miritello, S. Boninelli, R. Lo Savio, M. G. Grimaldi, F. Priolo, F. Iacona, G. Nicotra, C. Spinella, and S. Coffa, J. Appl. Phys. 0021-8979 104, 094306 (2008). 10.1063/1.3006735
40. C. Summonte, Mater. Res. Soc. Symp. Proc. 0272-9172 297, 395 (1993).
41. M. Fried, T. Lohner, W. A. M. Aarnink, L. J. Hanekamp, and A. van Silfhout, J. Appl. Phys. 0021-8979 71, 5260 (1992). 10.1063/1.350587
42. J. Tauc, in Amorphous and Liquid Semiconductors, edited by, J. Tauc, (Plenum, New York, 1974), p. 175.
43. S. Knief and W. von Niessen, Phys. Rev. B 0163-1829 59, 12940 (1999). 10.1103/PhysRevB.59.12940
44. S. M. Sze and K. K. Ng, Physics of Semiconductor Devices (Wiley, New York, 2007), p. 53.
45. F. Iacona, S. Lombardo, and S. U. Campisano, J. Vac. Sci. Technol. B 1071-1023 14, 2693 (1996). 10.1116/1.589006
46. A. Terrasi, C. Coluzza, and G. Margaritondo, J. Appl. Phys. 0021-8979 78, 3820 (1995). 10.1063/1.359896
47. D. Pacifici, E. C. Moreira, G. Franz, V. Martorino, F. Priolo, and F. Iacona, Phys. Rev. B 0163-1829 65, 144109 (2002). 10.1103/PhysRevB.65.144109