SCOPUS 정보 검색 플랫폼

Volumn 109, Issue 8, 2011, Pages

Probing the phonon confinement in ultrasmall silicon nanocrystals reveals a size-dependent surface energy

(7) Crowe, Iain F a Halsall, Matthew P a Hulko, Oksana b Knights, Andrew P b Gwilliam, Russell M c Wojdak, MacIej d Kenyon, Anthony J d

a UNIVERSITY OF MANCHESTER (United Kingdom)

b MCMASTER UNIVERSITY (Canada)

c UNIVERSITY OF SURREY (United Kingdom)

d UNIVERSITY COLLEGE LONDON (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON NANOCLUSTERS; CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; FITTING PARAMETERS; HIGH-TEMPERATURE ANNEALING; INTERFACIAL STRESS; LENGTH SCALE; PEAK SHIFT; PHONON CONFINEMENT; PHONON CONFINEMENT MODEL; PHYSICAL MEANINGS; RAMAN LINE SHAPES; SCATTERING SPECTRA; SILICON NANOSTRUCTURES; SILICON SURFACES; SURFACE ENERGIES; TEM IMAGES; ULTRASMALL SILICON;

ELECTRON ENERGY LOSS SPECTROSCOPY; INTERFACIAL ENERGY; PHONONS; SURFACE CHEMISTRY; TRANSMISSION ELECTRON MICROSCOPY;

AMORPHOUS SILICON;

EID: 79955718011 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3575181 Document Type: Article

Times cited : (48)

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