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Volumn 12, Issue 8, 2012, Pages 4001-4006

Engineering independent electrostatic control of atomic-scale (∼4 nm) silicon double quantum dots

Author keywords

double quantum dots; quantum computing; Si:P; silicon; STM Lithography

Indexed keywords

ATOMIC SCALE; CAPACITANCE CALCULATION; CAPACITIVE COUPLINGS; CONTROL ELECTRODE; DEVICE DESIGN; DOUBLE QUANTUM DOTS; ELECTRIC AND MAGNETIC FIELDS; ELECTRONIC SPINS; ELECTROSTATIC CONTROL; ELECTROSTATIC MODELING; FABRICATION ACCURACY; INDEPENDENT CONTROL; LENGTH SCALE; OPTIMIZED DEVICES; P DONORS; PHOSPHORUS DONORS IN SILICON; PRECISION ALIGNMENT; QUANTUM COMPUTING; SCALABLE QUANTUM COMPUTING; SCANNING TUNNELING MICROSCOPES; SILICON DOUBLE QUANTUM DOT; SINGLE DONOR; STM-LITHOGRAPHY;

EID: 84864703742     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl3012903     Document Type: Article
Times cited : (38)

References (38)
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    • 0032516155 scopus 로고    scopus 로고
    • Kane, B. E. Nature 1998, 393, 133
    • (1998) Nature , vol.393 , pp. 133
    • Kane, B.E.1
  • 20
    • 84861563988 scopus 로고    scopus 로고
    • Since submission of this manuscript we have become aware of a study by Roche et al.
    • Since submission of this manuscript we have become aware of a study by Roche et al. (published after submission) which demonstrates transport through a pair of individual donors in a FinFET device: Roche, B.; Dupont-Ferrier, E.; Voisin, B.; Cobian, M.; Jehl, X.; Wacquez, R.; Vinet, M.; Niquet, Y. M.; Sanquer, M. Phys. Rev. Lett. 2012, 108, 206812
    • (2012) Phys. Rev. Lett. , vol.108 , pp. 206812
    • Roche, B.1    Dupont-Ferrier, E.2    Voisin, B.3    Cobian, M.4    Jehl, X.5    Wacquez, R.6    Vinet, M.7    Niquet, Y.M.8    Sanquer, M.9


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.