Probing the intrinsic electrical properties of thin organic layers/semiconductor interfaces using an atomic-layer-deposited Al 2O 3 protective layer

Applied Physics Letters

Volumn 101, Issue 5, 2012, Pages

  Peng, W ^a   Seitz, O ^a   Chapman, R A ^a   Vogel, E M ^b   Chabal, Y J ^a  

^a The University of Texas at Dallas   (United States)

^b Georgia Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; CONDUCTANCE MEASUREMENT; DEVICE FABRICATIONS; GATE STACKS; HIGH QUALITY; INTRINSIC ELECTRICAL PROPERTY; MERCURY PROBE; MOLECULAR LAYER; PROTECTIVE LAYERS; SI (1 1 1); THIN ORGANIC LAYERS; TUNNELING CURRENT;

ATOMIC LAYER DEPOSITION; MERCURY (METAL); PROBES;

ELECTRIC PROPERTIES;

EID: 84864691709     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4742168     Document Type: Article

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