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Volumn 606, Issue 19-20, 2012, Pages 1501-1506
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Dependence of the Schottky barrier on the work function at metal/SiON/SiC(0001) interfaces identified by first-principles calculations
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Author keywords
Density functional theory; Schottky barrier; Schottky limit; SiON SiC
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Indexed keywords
FERMI LEVEL PINNING;
FIRST-PRINCIPLES CALCULATION;
SCHOTTKY;
SCHOTTKY BARRIER HEIGHTS;
SCHOTTKY BARRIERS;
SION/SIC;
CALCULATIONS;
DENSITY FUNCTIONAL THEORY;
SCHOTTKY BARRIER DIODES;
SILICON CARBIDE;
WORK FUNCTION;
SEMICONDUCTOR METAL BOUNDARIES;
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EID: 84864463316
PISSN: 00396028
EISSN: None
Source Type: Journal
DOI: 10.1016/j.susc.2012.05.023 Document Type: Article |
Times cited : (27)
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References (43)
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