Origin of Schottky barriers in gold contacts on GaAs(110)

Physical Review Letters

Volumn 93, Issue 20, 2004, Pages

  Reusch, T C G ^a   Wenderoth, M ^a   Winking, L ^a   Quaas, N ^a   Ulbrich, R G ^a  

^a UNIVERSITY OF GÖTTINGEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPUTER SIMULATION; ELECTRIC POTENTIAL; FERMI LEVEL; IMAGING TECHNIQUES; POLYCRYSTALLINE MATERIALS; SCANNING TUNNELING MICROSCOPY; SCHOTTKY BARRIER DIODES;

CROSS-SECTIONAL CONFIGURATIONS; METAL-INDUCED GAP STATES (MIGS); SCANNING TUNNELING SPECTROSCOPY (STS); TIP-INDUCED BAND BENDING (TIBB);

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 19744372558     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.93.206801     Document Type: Article

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