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Physical Review Letters

Volumn 101, Issue 16, 2008, Pages

Quantum electron transport through ultrathin Si films: Effects of interface passivation on fermi-level pinning

(3) Gohda, Y a,b Watanabe, S b Gross A a

a UNIVERSITY OF ULM (Germany)

b UNIVERSITY OF TOKYO (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TRANSITIONS; ELECTRON TRANSPORT PROPERTIES; ELECTRONS; FERMIONS; HYDROGEN; QUANTUM CHEMISTRY; SILICON; ULTRATHIN FILMS;

ALUMINUM ELECTRODES; APPLIED BIASSED; ELECTRON TRANSPORTS; FIRST-PRINCIPLES CALCULATIONS; GAP STATES; INTERFACE PASSIVATIONS; LOW CONDUCTIVITIES; QUANTUM ELECTRON TRANSPORTS; SI ATOMS; SI FILMS; ULTRATHIN SILICONS; VOLTAGE CHARACTERISTICS;

PASSIVATION;

EID: 54849422266 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.101.166801 Document Type: Article

Times cited : (7)

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