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Applied Physics Letters

Volumn 99, Issue 5, 2011, Pages

Collateral evidence for an excellent radiative performance of Al xGa1-xN alloy films of high AlN mole fractions

(4) Chichibu, S F a Hazu, K a Onuma, T a Uedono, A b

a TOHOKU UNIVERSITY (Japan)

b UNIVERSITY OF TSUKUBA (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOY FILM; ALN; LOW TEMPERATURES; LUMINESCENCE EFFICIENCIES; MOLE FRACTION; NEAR BAND EDGE EMISSIONS; NON-RADIATIVE LIFETIMES; RADIATIVE LIFETIME; RECOMBINATION DYNAMICS; TEMPERATURE RISE; TIME-RESOLVED SPECTROSCOPY;

ALUMINUM; EPILAYERS; GALLIUM NITRIDE; LASER SPECTROSCOPY;

GALLIUM ALLOYS;

EID: 80051595740 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3615681 Document Type: Article

Times cited : (28)

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