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Applied Physics Letters

Volumn 96, Issue 13, 2010, Pages

Probing the relationship between structural and optical properties of Si-doped AlN

(5) Pantha, B N a Sedhain, A a Li, J a Lin, J Y a Jiang, H X a

a Texas Tech University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; BAND EDGE; BAND GAPS; PL EMISSION; PL MEASUREMENTS; SI-DOPING; STRUCTURAL AND OPTICAL PROPERTIES; X-RAY DIFFRACTION STUDIES;

EDGE DISLOCATIONS; EPILAYERS; OPTICAL PROPERTIES; SEMICONDUCTOR DOPING; SILICON; X RAY DIFFRACTION;

SCREW DISLOCATIONS;

EID: 77950480771 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3374444 Document Type: Article

Times cited : (22)

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